The invention discloses a device and a method for reducing generation of 4H-SiC polymorphic defects, and belongs to the field of crystal growth devices. The crystal growth device solves the problems that an existing crystal growth device for growing 4H-SiC crystals is prone to generating multiple crystal forms in the crystal growth process, and the crystal growth quality is poor. The device comprises a crucible upper cover, an outer crucible, an inner crucible, a connecting plate, a supporting table, an induction coil and a quartz tube, the outer crucible is arranged on the upper side of the supporting table, the inner crucible is sleeved with the outer crucible, the crucible upper cover is arranged on the outer crucible, seed crystals are arranged on the inner wall of the crucible upper cover, the inner crucible is filled with raw materials, the inner crucible is arranged on the connecting plate, the connecting plate is in threaded connection with the threaded rod, the threaded rod is arranged in the supporting table and penetrates through the connecting plate to be connected with the inner crucible, the supporting table and the outer crucible are arranged in the quartz tube, and the induction coil is arranged on the outer side of the quartz tube. According to the crystal growth device and method, the stable crystal growth rate is realized, and the generation of crystal growth defects is reduced.