Crystal growth furnace and crystal production process

Abstract

The invention discloses a crystal growth furnace and a crystal production process. The crystal growth furnace comprises a furnace body, a crucible assembly, a heating assembly and a heat insulation assembly, the crucible assembly comprises a first crucible, a second crucible and a third crucible, a first cavity is suitable for being constructed into a raw material discharging area, and a third cavity is suitable for being constructed into a crystal growth area; the heating assembly comprises a first heater and a second heater, the first heater is arranged around the crucible assembly, and thesecond heater is arranged under the crucible assembly; the heat insulation assembly comprises a first heat insulation part, a second heat insulation part and a third heat insulation part, the first heat insulation part is arranged around the first heater, the second heat insulation part is arranged at the upper end of the first heat insulation part and extends inwards to exceed the first heater soas to surround the crucible assembly, the third heat insulation part is arranged at the upper end of the second heat insulation part and located above the crucible assembly, and the third heat insulation part at least extends inwards to the radial inner side of the first crucible. According to the crystal growth furnace, production of defect-free crystals is facilitated.

Description

technical field [0001] The invention relates to the technical field of crystal processing equipment, in particular to a crystal growth furnace and a crystal production process. Background technique [0002] At present, the production of monocrystalline silicon mainly adopts CZ (Czochralski method) and CCZ (continuous pulling method) production. In related technologies, the research on CCZ production of monocrystalline silicon technology is mainly based on resistivity and feeding methods (such as solid state feeding: generally small particles are used to control the speed of feeding, and it is necessary to do effective in the crystal growth area and the feeding area. Isolation, to avoid impurity in the feeding area from affecting the crystal growth, lower cost and higher precision of the control system; liquid feeding: an external melting area is required to melt the raw materials and then be lowered into the crucible via the control system) to make corresponding improvements...

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Problems solved by technology

In related technologies, the research on the technology of producing monocrystalline silicon in CCZ is mainly through resistivity and feeding methods (such as solid feeding: generally small particles are used to control the speed of feeding, and it is necessary to do effective in the crystal growth area and the feeding area. Isolation, to avoid impurity in the feeding area from affecting the crystal growth, lower cost and higher precision of the control system; liquid feeding: an external melting area is required to melt the raw materials and then be lowered into the crucible via the control system) to make corresponding improvements, then CCZ Research on the production of monocrystalline silicon technology is easily limited, which is not conducive to the production of defect-free crystals

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