Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing highly-uniform synthetic quartz glass weight

A technology for synthesizing quartz and glass ingots, which is applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., and can solve the problems of longitudinal distribution of quartz glass ingots, affecting the uniformity of longitudinal structure, and uneven distribution of quartz glass refractive index and density. Uniformity and other issues to reduce or eliminate temperature gradients, uniform temperature distribution, and improve structural uniformity

Active Publication Date: 2015-09-23
CHINA BUILDING MATERIALS ACAD
View PDF8 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The temperature gradient on the deposition surface will cause a large difference in the structure of the quartz glass ingot from the center to the edge. For example, the hydroxyl content of the quartz glass gradually decreases along the center to the edge, which leads to uneven distribution of the refractive index and density of the quartz glass. , which in turn affects the structural uniformity of the deposition surface direction of the quartz glass
At the same time, the deposition mechanism of quartz glass ingots produced by this method is formed by centrifugal force and gravity, which is forced to gradually diffuse from the center to the edge, that is, the entire deposition surface is in a normal distribution shape, resulting in the appearance of layers in the longitudinal distribution of quartz glass ingots. shape phenomenon, seriously affecting the uniformity of its longitudinal structure
Therefore, the quartz glass ingots manufactured by this method have uneven structure, which in turn affects the one-dimensional and three-dimensional optical uniformity, stress and other properties of the quartz glass, and finally destroys the performance of precision optical systems in the fields of aerospace, nuclear technology, and precision instruments. image quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing highly-uniform synthetic quartz glass weight
  • Method for preparing highly-uniform synthetic quartz glass weight
  • Method for preparing highly-uniform synthetic quartz glass weight

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] figure 1 It is a schematic structural diagram of a deposition furnace used in the preparation method of the embodiment of the present invention. Please combine figure 1 , also refer to figure 2 and image 3 .

[0026] The preparation method of highly uniform synthetic quartz glass ingot, the steps are as follows:

[0027] Formation of silicon dioxide particles: the silicon tetrachloride raw material directly enters the silicon tetrachloride evaporation system to generate silicon tetrachloride vapor, and the flow rate of silicon tetrachloride vapor and hydrogen and oxygen entering the burner 4 is adjusted by a mass flow controller , Silicon tetrachloride vapor reacts chemically in the burning hydrogen-oxygen flame to form silicon dioxide particles; the flow rate of each raw material gas can be set by those skilled in the art according to needs, or the flow rate of the prior art can be used. In this embodiment, the silicon tetrachloride vapor flow rate is 20 g / min, ...

Embodiment 2

[0032] This embodiment adopts figure 2 Deposition furnace shown. Combine below figure 2 Be explained.

[0033] The preparation method of highly uniform synthetic quartz glass ingot is different from Example 1 as follows:

[0034] Formation of silicon dioxide particles: the silicon tetrachloride raw material directly enters the silicon tetrachloride evaporation system to generate silicon tetrachloride vapor, and the flow rate of the silicon tetrachloride vapor is adjusted to 25g / min by a mass flow controller, and enters the burner 4 Center material pipe, and keep the flow of fuel such as hydrogen and oxygen in the burner 4 to be 380L / min and 205L / min respectively to carry out the burner, and silicon tetrachloride vapor chemically reacts in the burning hydrogen-oxygen flame to form silicon dioxide Particles; there are two burners, symmetrically distributed, and the angle between the burner 4 and the vertical line is 30°.

[0035] Deposition of silicon dioxide particles: Th...

Embodiment 3

[0039] This embodiment adopts image 3 Deposition furnace shown. Combine below image 3 Be explained.

[0040] The preparation method of highly uniform synthetic quartz glass ingot is different from Example 1 as follows:

[0041] Formation of silicon dioxide particles: the silicon tetrachloride raw material directly enters the silicon tetrachloride evaporation system to generate silicon tetrachloride vapor, adjusts the flow rate of silicon tetrachloride vapor to 15g / min through a mass flow controller, and enters the burner 4 The central material pipe, and keep the flow rate of fuel such as hydrogen and oxygen in the burner 4 to be 330L / min and 150L / min respectively to carry out the burner, and the silicon tetrachloride vapor chemically reacts in the burning hydrogen-oxygen flame to form silicon dioxide Particles: one burner 4, and the burner 4 is vertically arranged on the roof of the deposition furnace.

[0042] Deposition of silicon dioxide particles: The silicon dioxide...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a highly-uniform synthetic quartz glass weight. Preparing is conducted through a vertical depositing furnace based on chemical vapor deposition, raw materials are led into a combustor and chemically reacted in the depositing furnace, silicon dioxide particles are formed, the depositing foundation of the quartz glass weight is a concave depositing pool formed by a bottom face and a side wall, the silicon dioxide particles formed based on chemical vapor synthesis are melted and freely scattered and deposited in the depositing pool, and the temperature gradient of the depositing face is lower than 20 DEG C. According to the method for preparing the highly-uniform synthetic quartz glass weight, the distributing consistency of quartz glass weight components is improved, and the quartz glass weight uniform in radial and axial structure is produced.

Description

technical field [0001] The invention relates to the technical field of quartz glass ingot preparation, in particular to a method for preparing a highly uniform synthetic quartz glass ingot. Background technique [0002] High-uniform synthetic quartz glass is an irreplaceable key basic material in high-tech fields such as aerospace, nuclear technology, lasers, and precision instruments. Optical inhomogeneity seriously affects the imaging quality of optical systems. [0003] At present, the melting methods of synthetic quartz glass ingot mainly include horizontal chemical vapor deposition method and vertical chemical vapor deposition method. Because the horizontal chemical vapor deposition method cannot produce large-sized, high-weight quartz glass ingots, and the furnace temperature is low, the energy consumption is large and the efficiency is low, it has been gradually replaced by the vertical chemical vapor deposition method. In the existing vertical chemical vapor deposit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03B20/00
Inventor 王玉芬聂兰舰向在奎饶传东王宏杰刘飞翔
Owner CHINA BUILDING MATERIALS ACAD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com