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Nozzle of polycrystalline-silicon furnace

A technology of nozzles and silicon furnaces, which is applied in crystal growth, silicon compound, single crystal growth, etc., and can solve the problems of low resistivity and large difference in resistance value of polysilicon films, etc.

Inactive Publication Date: 2007-06-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

The larger the polysilicon grain, the faster the carrier migration speed, which finally leads to the lower resistivity of the polysilicon film with larger grains
[0005] Therefore, when the current polysilicon growth process is applied to high-resistance products, there will be a same polysilicon growth device, and the resistance values ​​​​of each position in the furnace are very different.

Method used

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  • Nozzle of polycrystalline-silicon furnace
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Embodiment Construction

[0015] The key to solving the problem of the difference in the resistance value of each position in the furnace is to ensure that the deposition rate of each position in the furnace is consistent while ensuring that the deposition temperature of each position in the furnace body is the same. If the gas supply of silane is increased as the gas reaction in the furnace is consumed, the partial pressure ratio of the silane gas participating in the reaction will remain unchanged. It is realized that the deposition rate of each position in the furnace remains the same at the same temperature, and finally the difference in resistance and film thickness in the furnace is minimized.

[0016] The nozzle of the polysilicon furnace of the present invention is shown in Figure 4. On the basis of the nozzle of the existing polysilicon furnace (see Figure 3), the nozzle of the silane gas passing into the furnace is lengthened, and the tube wall of the extension is extended. Add some air outlets o...

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Abstract

A nozzle of polycrystalline silicon stove can control grain diameter difference in polycrystalline silicon stove, decrease impedance difference in polycrystalline silicon device and increase yield of product. An extended part is added at end of the nozzle, whose include angle with nozzle is right angle with multiple outlets, silane gas nozzle in stove is lengthened while outlets are added on the pipe wall of extended part, as a result, each part keep same deposition ratio at same temperature.

Description

Technical field [0001] The invention relates to a polysilicon furnace used for polysilicon growth, in particular to a nozzle of a polysilicon furnace. Background technique [0002] As shown in Figure 2, most of the current polysilicon growth devices adopt a gas supply method in which gas flows in one side. With the continuous consumption of gas, the partial pressure ratio of silane at various positions in the furnace is not completely consistent. In order to keep the deposition rate of each position in the furnace consistent, the deposition temperature of each position in the furnace must be adjusted. However, this will cause the difference in the size of the polysilicon grown crystal grains, which will lead to the difference in the resistance value of each position in the furnace. [0003] In order to maintain the same deposition rate at each position in the furnace, the deposition temperature at each position in the furnace is different. In the polysilicon growth process, the s...

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Application Information

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IPC IPC(8): C01B33/027C30B25/00C30B25/14B01J19/26
Inventor 董颖
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP