Voltage reference circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2008-10-22
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Abstract
Description
technical field
[0001] The present invention generally relates to a voltage reference circuit used in a semiconductor integrated device. More particularly, the present invention relates to a programmable voltage reference circuit implemented with EEPROM cells for use in semiconductor integrated devices. Background technique
[0002] Reference voltage generating circuits are required in various semiconductor devices, especially nonvolatile memory devices. In the prior art, a bandgap reference circuit is often used to generate a stable reference voltage. For example, US Patent Nos. 6,570,437, 6,566,850 and 6,563,371 respectively show circuits and methods for generating voltage using bandgap circuits. However, the bandgap circuit itself has a serious disadvantage: the bandgap reference circuit itself usually consumes relatively large DC power consumption. In addition, in order to obtain the required voltage, a voltage divider is also required. These two modules usually need t...