Thin film semiconductor device and method of manufacturing the same, electro-optical device, and electronic apparatus
A thin-film semiconductor and manufacturing method technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effect of ensuring insulation and high reliability
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no. 1 approach
[0043] Embodiments of the present invention will be described below with reference to the drawings. This embodiment mode exemplifies the basic structure of the thin-film semiconductor device according to the present invention and an electro-optical element in which the thin-film semiconductor device is mounted.
[0044] (thin film semiconductor device)
[0045] figure 1 It is a schematic configuration diagram showing the circuit configuration of the thin film semiconductor device according to the present invention. Such as figure 1 As shown, the thin film semiconductor device of this embodiment includes an internal circuit (main circuit portion) 17 , a protection circuit portion 18 and a terminal portion 19 . A plurality of connection pads 19 a to 19 c are provided on the terminal portion 19 . A protection circuit unit 18 is interposed between these connection pads 19 a to 19 c and the internal circuit 17 . The connection pads 19b, 9c are power input terminals (Vdd, Vss...
no. 2 approach 〕
[0076] Next, a second embodiment of the present invention will be described. Figure 5 It is a schematic cross-sectional view of a protective circuit element included in the thin film semiconductor device according to the second embodiment. Figure 5 is equivalent to the previous first embodiment figure 2 In the figure of (b), the planar structure of the protective circuit element 281 related to this embodiment is the same as figure 2 The protection circuit element 181 shown in (a) is basically the same.
[0077] Figure 5 The protection circuit element 281 shown is mainly composed of a PIN diode 281a and a floating electrode 118g. Therefore, it is characterized in that between the I layer 118i and the N layer 118n provided at the position overlapping the semiconductor film 118s of the PIN diode 281a and the floating electrode 118g, the region with a lower impurity concentration than the N layer 118n is a low impurity region. Concentration region 218n forms the region. ...
no. 3 approach 〕
[0081] Next, a third embodiment of the present invention will be described. Figure 6 It is a schematic cross-sectional view of a protective circuit element included in the thin film semiconductor device according to the third embodiment. Figure 6 is equivalent to the previous first embodiment figure 2 In the figure of (b), the planar structure of the protection circuit element 381 related to this embodiment is the same as figure 2 The protection circuit element 181 shown in (a) is basically the same.
[0082] Figure 6 The protection circuit element 381 shown is mainly composed of a PIN diode 381a and a floating electrode 118g. Between the I-layer 118i and the N-layer 118n, which are provided on the same plane as the semiconductor film 118s and the floating electrode 118g of the PIN diode 381a, a region with a lower impurity concentration than the N-layer 118n is formed as a low-impurity-concentration region 318n. area, with Figure 5 The same is shown for PIN diode 2...
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