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Semiconductor device

A semiconductor and chip technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve complex problems such as combination processing

Inactive Publication Date: 2009-02-11
AOI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be noted that if the shape and thickness of the semiconductor chip and these chip parts are different from each other, the above bonding process will become more complicated

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Comparison scheme
Effect test

no. 1 example

[0061] figure 1 is a plan view showing a semiconductor device according to a first embodiment of the present invention, figure 2 is along figure 1 Sectional view along line II-II shown in . at this time, figure 1 and figure 2 The difference is that the dimensions of the individual elements of the semiconductor device are not equal to each other.

[0062] This semiconductor device includes a square substrate 21 made of, for example, a resin plate, a metal plate, or a glass plate. An adhesive layer 22 made of, for example, an adhesive, an adhesive sheet, or a double-coated tape is formed on the entire upper surface of the substrate 21 . The lower surface of a silicon substrate 24 of a substantially square semiconductor chip 23 , which is slightly smaller in size than the substrate 21 , is mounted on the central portion of the upper surface of the adhesive layer 22 .

[0063] The semiconductor chip 23 includes a plurality of connection pads 25 made of, for example, alu...

no. 2 example

[0085] Figure 12 is a vertical sectional view showing a semiconductor device according to a second embodiment of the present invention. Figure 12 The semiconductor device shown in the figure 2 There are significant differences in the semiconductor devices shown in Figure 12 In the shown semiconductor device, the pad portion of the first rewiring 34 is connected to the pad portion of the second rewiring 34 through the columnar electrode arranged in the opening portion 36 formed in the portion of the second insulating film 35 above the pad. The second underlying metal layer 37 below the wiring 38 .

[0086] Now explain the manufacture Figure 12 Exemplary methods of semiconductor devices shown. In this case, those manufacturing steps up to the step of peeling off the corrosion-resistant plating film 51 as shown in FIG. 4 are the same as those of the first embodiment of the present invention described above. Therefore, the subsequent manufacturing steps will be described...

no. 3 example

[0097] When in the manufacturing steps shown in FIG. 3, the adhesive layer 22 is formed only on the lower surface of the silicon substrate 24 of the semiconductor chip 23, and is bonded to a predetermined position on the upper surface of the substrate 21, the third The semiconductor device of the embodiment, such as Figure 19 shown. In order to form the adhesive layer 22 on the lower surface of the silicon substrate 24 of the semiconductor chip 23, it is effective to fix the adhesive layer 22 to the back surface of the silicon wafer on which the connection pads 25 and the insulating film 26 are formed, and then dicing This silicon wafer yields a semiconductor chip 23 with an adhesive layer 22 formed on the back thereof. Alternatively, it is also possible to drop the mold coating material on those regions on the substrate 21 where the semiconductor chip 23 is to be mounted by using such as a dispenser (dispenser), after which the semiconductor chip 23 is mounted on the mold c...

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Abstract

A plurality of semiconductor chips ( 23 ) are bonded to an adhesive layer ( 22 ) formed on a base plate ( 21 ). Then, first to third insulating films ( 31, 35, 39 ), first and second underlying metal layers ( 33, 37 ), first and second re-wirings ( 34, 38 ), and a solder ball ( 41 ) are collectively formed for the plural semiconductor chips ( 23 ). In this case, the first and second underlying metal layers ( 33, 37 ) are formed by a sputtering method, and the first and second re-wirings ( 34, 38 ) are formed by an electroplating method. Then, a laminate structure consisting of the three insulating films ( 39, 35, 31 ), the adhesive layer ( 22 ), and the base plate ( 21 ) is cut in a region positioned between the adjacent semiconductor chips ( 23 ).

Description

[0001] This application is a divisional application. The original application is the international patent application PCT / JP2003 / 001061, which entered the Chinese national phase on October 8, 2003, and the international filing date is February 3, 2003. The Chinese national application number of the original application It is 03800128.4, and the title of the invention is "semiconductor device and its manufacturing method". technical field [0002] The present invention relates to a semiconductor device and its manufacturing method, in particular, to a semiconductor device and its manufacturing method in which re-wiring (re-wiring) is directly formed on one surface of a semiconductor chip like a chip scale package (CSP) . Background technique [0003] A conventional semiconductor device, such as a semiconductor device called BGA (Ball Grid Array), includes a device in which a semiconductor chip made of, for example, an LSI is mounted on a relay substrate slightly larger in siz...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485H01L23/538H01L25/00
CPCH01L2924/01075H01L24/97H01L2224/12105H01L2224/24137H01L2224/24195H01L2224/24226H01L2224/24246H01L2224/32225H01L2224/32245H01L2224/73267H01L2224/97H01L2225/1035H01L2225/1058H01L2924/18162H01L2924/181H01L2224/19H01L2224/24H01L2224/82001H01L2224/83H01L2224/82H01L2924/00012
Inventor 若林猛三原一郎
Owner AOI ELECTRONICS CO LTD
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