Image sensor element and manufacturing method thereof

Abstract

The present invention discloses an image sensing element and manufacturing method thereof. The image sensing element includes an active layer disposed overlying a substrate; an isolating region, disposed in the active layer to define a plurality of pixels, wherein the isolating region surrounds the corresponding pixels, contacting or extending into the substrate, to isolate each pixel; a photodiode is disposed in the pixels. The manufacturing method of the image sensing element comprises: providing a substrate including an active layer; forming a plurality of isolating regions in the active layer wherein a plurality of isolating regions contact and extend into the substrate to isolate and define corresponding pixels; forming a doping region in each pixel to generate a photodiode. The present invention improves the leakage current and crosstalk problem of the traditional image sensing element.

Description

technical field [0001] The present invention relates to a microelectronic element, and in particular to an image sensing element. Background technique [0002] Solid-state image sensors are necessary components such as digital cameras, mobile phones or other optoelectronic components. Generally, image sensors used in color analog or digital cameras or camcorders include charge-coupled devices (charge-coupled devices, hereinafter referred to as CCDs) ) or a metal-oxide-semiconductor (CMOS) photodiode array structure, the photodiode array structure includes a light-splitting light-sensing layer under one or more layers patterned with a color filter array, and a color filter array A surface array layer of microlens elements on top of the layer. A basic unit of an image sensor can be defined by a pixel, and the fabrication techniques used to form the CMOS image sensor are applicable to the above two types of sensors. [0003] A CMOS image sensor includes a photodetector to det...

AI Technical Summary

Problems solved by technology

The color filter layer above the substrate includes red, green and blue regions. However, in this image sensor, electrons in a pixel can easily enter adjacent pixels through the underlying substrate (this phenomenon can be called As cross-talk), especially when the size of the pixel is reduced, the cross-talk phenomenon is more likely to occur. In addition, the traditional image sensor cannot provide uniform sensitivity of the three primary colors

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