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Method for manufacturing absorber layers for solar cell

A vapor deposition, thin film technology, applied in circuits, lock casings, photovoltaic power generation, etc., can solve the problems of unusable glass substrates and lack of flexibility of glass substrates

Inactive Publication Date: 2009-03-04
IN SOLAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, glass substrates are not flexible, so there is a problem that glass substrates cannot be used where free deformation is required

Method used

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  • Method for manufacturing absorber layers for solar cell
  • Method for manufacturing absorber layers for solar cell
  • Method for manufacturing absorber layers for solar cell

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no. 3 approach

[0041] Furthermore, according to the third embodiment of the present invention, by using [Me 2 In-(μTeMe)] 2 or [Me 2 In-(μSMe)] 2 Instead of [Me2Ga-(μSeMe)] used as a precursor in step S204 of the second embodiment 2 , a part of Se can be replaced by Te or S, as a result, a thin film CuIn(Se, S) or CuIn(Se, Te) is obtained.

[0042] Although the present invention has been described in the preferred embodiments, the technical aspects of the present invention are not limited thereto. In other words, even as a thin film for solar cells, CuIn 1-x Ga x Se 2 (assuming 0≤x≤1) and CuIn(Se,S) thin films are described, but these thin films are only I-III-VI composed of elements selected from groups I, III and VI of the periodic table 2 A few examples of compounds.

[0043] Some specific examples are described below. First, as a first step, a III-VI thin film is formed by metal-organic chemical vapor deposition using a single precursor containing group III and VI elements. Gro...

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Abstract

PURPOSE: A method for manufacturing absorber layers for a solar cell is provided to obtain a structure reaching the chemical equivalent ratio by the simple control of the growth condition. CONSTITUTION: A thin film of a family III-VI of the periodic table compound is formed on a substrate by MOCVD(Metal Organic Chemical Vapor Deposition) using single precursor including elements of families III-VI of the periodic table. A thin film of a I2-VI compound is formed on the thin film of the III-VI compound by MOCVD using a precursor including metals of a family I of the periodic table. A thin film of a I-III-VI2 compound is formed by MOCVD using single precursor including elements of the family III-VI of the periodic table on the thin film of the I2-VI compound.

Description

technical field [0001] The present invention relates to a method of manufacturing solar cell absorber layers, and more particularly to a method of manufacturing CuInSe by MOCVD 2 and CuIn 1-x Ga x Se 2 The thin film method, the composition of the thin film is close to the chemical equivalence ratio (chemical equivalence ratio). Background technique [0002] CuInSe 2 (hereinafter referred to as "CIS") or CuIn 1-x Ga x Se 2 (hereinafter referred to as "CIGS") triple thin film is a semiconductor compound that has been actively researched recently. [0003] Unlike conventional solar cells using silicon, the CIS-based thin-film solar cells can be made thinner than 10 micrometers in thickness and have stable performance even after long-term use. In addition, it has been confirmed through experiments that the energy conversion rate of CIS-based thin-film solar cells is as high as 19%, which is superior to other solar cells, so it is very promising to commercialize it as a l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0256H01L31/0445H01L31/0749
CPCY02E10/50Y02E10/541E05B9/08E05B49/00
Inventor 崔寅焕
Owner IN SOLAR TECH