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Making method for semiconductor part

A device manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing process flow, increasing production cost, inflexible and comprehensive control, etc., and achieve the effect of increasing process difficulty

Inactive Publication Date: 2009-03-11
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is relatively complicated to operate, increases the process flow, and increases the production cost. The control of SH is not flexible and comprehensive enough, and it cannot be considered and optimized globally.

Method used

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  • Making method for semiconductor part
  • Making method for semiconductor part
  • Making method for semiconductor part

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Embodiment Construction

[0035] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0036]The manufacture of semiconductor devices is to form solid-state electronic components inside or on the surface of the wafer. Although the types and functions of the manufactured devices are different, they are all manufactured by the basic structure and production process. These basic processes are applied in different ways to produce the products desired by customers. Some of the key structures and processes play a major role in device performance, and slight improvements to these structures and processes can effectively improve device performance and device manufacturing yield. The invention controls the root shape of the device gate etching and realizes the adjustment of the electrical parameters of the device by combining the...

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Abstract

The invention discloses a method for fabricating semiconductor devices. The method combines the surface-planarization technology, the wet corroding technology and the gate etching technology. The step height is flexibly controlled in terms of the different requirements of different types of devices for electrical parameters; in the fabrication process of the gate etching thereafter, by using the adjustment of the step height, the endpoint of the gate etching is adjusted, in other words, the root shape of the etching is adjusted; and the predicted electrical parameters are obtained. Under the circumstances of no increase in the technique difficulty of the prior planarization technology and the gate etching technology, the invention realizes to adjust electrical parameters of devices by effectively controlling the step height of STI structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device manufacturing method which combines surface planarization technology, wet etching technology and gate etching technology to adjust device electrical parameters. Background technique [0002] As the feature size of VLSI devices is continuously reduced proportionally and the integration level is continuously improved, the requirements for etching, one of the key processes of semiconductor manufacturing, are getting higher and higher. Not only requires high fidelity of pattern transfer, high etching selection ratio, and good etching uniformity; but also requires etching equipment to ensure high stability and low defects in mass production Rate. At present, plasma etching has become one of the key processes in the manufacture of integrated circuits. Its purpose is to completely copy the mask pattern to the surface of the silicon wafer. The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/822H01L21/762
Inventor 农昊蔡孟峰
Owner SEMICON MFG INT (SHANGHAI) CORP