Combined type high-power semiconductor chip

Abstract

The invention provides a combined type high-power semiconductor chip and belongs to the technical field of power electronic semiconductor devices. The combined type high-power semiconductor chip comprises a package body, a chip, molybdenum pieces and copper pieces, wherein the package body comprises an inner abnormally-shaped annular ring and an outer abnormally-shaped annular ring; an inward protruded clamping ring is arranged on the inner wall of the upper part of the outer abnormally-shaped annular ring (102); an inward protruded limiting block is arranged at the bottom of the outer abnormally-shaped annular ring (102); a groove which is combined with the clamping ring on the inner wall of the outer abnormally-shaped annular ring in a matched way is arranged on the outer edge of the inner abnormally-shaped annular ring (107); an inward protruded limiting block is arranged at the upper end of the inner abnormally-shaped annular ring (107); a lower copper piece (101), a lower molybdenum piece (103), the chip (104) and the inner abnormally-shaped annular ring are arranged in the outer abnormally-shaped annular ring; and an upper molybdenum piece (105) and an upper copper piece (106) are arranged in the inner abnormally-shaped annular ring. By the combined type high-power semiconductor chip, the chip, the molybdenum pieces and the copper pieces can be compressed with one another according to pressure of an outer clamping device, and aims of high product yield, low thermal stress, improvement on thermal cycle frequency, low cost, and convenience and quickness of assembly arefulfilled.

Description

Technical field: [0001] The invention relates to a combined high-power semiconductor chip, which belongs to the technical field of power electronic semiconductor chips. Background technique: [0002] Power electronic semiconductor chips refer to semiconductor devices such as rectifier diodes, fast rectifier diodes, thyristors and fast thyristors in the field of power electronic devices. Most of the low-power chip anode and cathode are welded together with soft solder and molybdenum sheet to form a die. The chips with high power above 200A are welded together by molybdenum and silicon chips. Generally, the molybdenum sheet is welded on the anode side of the semiconductor chip. Welding directly places the chip between two molybdenum sheets, and relies on the pressure of the external clamping device to press the chip and the molybdenum sheet together. [0003] However, both of the above methods have disadvantages: [0004] The welding type has a large thermal stress, and the...

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