Unlock instant, AI-driven research and patent intelligence for your innovation.

Offset dependent resistor for measuring misalignment of stitched masks

A technology of offset and resistors, applied in the direction of electric solid-state devices, semiconductor/solid-state device testing/measurement, circuits, etc.

Inactive Publication Date: 2009-04-08
NXP BV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These resistor values ​​will vary from ideal when an offset is present and equal to ideal when no offset exists

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Offset dependent resistor for measuring misalignment of stitched masks
  • Offset dependent resistor for measuring misalignment of stitched masks
  • Offset dependent resistor for measuring misalignment of stitched masks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] With reference to the accompanying drawings, figure 1 A portion of an overlap region 10 of an integrated circuit chip is depicted. In the overlap region 10, a first set of circuit components may be formed using a reference mask, and a second set of resistive components may be formed using a second mask (not shown). Therefore, some circuit components in both must be "stitched" together to integrate the circuit laid down by the reference mask and the second mask. In this representative embodiment, four offset-dependent resistor structures 12a, 12b, 14a, and 14b are employed to determine misalignment between circuits.

[0024] Using a first embodiment (described in more detail below with respect to FIGS. 2-5 ), structures 12a and 12b are realized, comprising a first portion 24 formed from an initial mask and a second portion formed from a second mask. 26. When the second portion 26 is misaligned toward the first portion 24 (ie, positive misalignment as indicated by the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system and method for identifying misalignments in an overlapping region of a stitched circuit in an integrated circuit fabrication process. The method comprises: creating a first circuit using a reference mask, wherein first circuit includes a first part of an offset dependent resistor structure in the overlapping region; creating a second circuit using a secondary mask, wherein the second circuit includes a second part of the offset dependent resistor structure in the overlapping region, wherein the.offset dependent resistor structure includes a plurality of nubs that interconnect the first part and the second part of theis offset dependent resistor structure; measuring a resistance across the offset dependent resistor structure; and determining an amount of misalignment based on the measured resistance.

Description

technical field [0001] The present invention relates to measuring misalignment of stitch masks in semiconductor manufacturing processes, and more particularly to a matched offset-dependent resistor structure with enhanced sensitivity for electrically measuring misalignment of stitch masks for etching interconnect layers. Orientation misaligned. Background technique [0002] Most semiconductor devices are constructed using multiple layers of materials. Patterning is performed by adding or removing selected portions of each layer to form circuit components that will eventually form a complete integrated circuit. Known patterning processes, such as photolithography, define the dimensions of the circuit components using a mask that selectively blocks the light source. [0003] As integrated circuits increase in complexity, the number and size of circuits grows larger, often consuming entire wafers. In wafer scale integration (WSI), the reticle of a standard mask is usually to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544G01R31/28H01L21/66
CPCH01L22/12H01L21/76838H01L22/34H01L2924/0002H01L23/5228H01L2924/00
Inventor J·M·阿马托
Owner NXP BV