Pixel structure and its production

A technology of pixel structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of high cost, complicated photoresist bump manufacturing, etc., and achieve the effect of improving reflectivity

Active Publication Date: 2009-06-10
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the pad layer, reflective electrodes on the pad layer, and photoresist bumps are complex and costly to manufacture.

Method used

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  • Pixel structure and its production
  • Pixel structure and its production
  • Pixel structure and its production

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Embodiment Construction

[0057]Generally speaking, disposing reflective pixel electrodes in the pixel structure can make the pixel structure have the ability to reflect light. It has both transmissive and reflective display modes. It can be seen from the description of the prior art that in order to make this type of pixel structure have good quality, a pad layer for padding the reflective pixel electrode and a photoresist bump to improve the reflectivity are usually made in the pixel structure, but this method will lead to The manufacturing process of the pixel structure becomes complicated, which reduces the output and product yield. Therefore, the present invention proposes a method for manufacturing a pixel structure, so as to manufacture a pixel structure with good quality under the premise of simplifying the process complexity.

[0058] In order to make the above and other objects, features and advantages of the present invention more comprehensible, the following specific embodiments are descr...

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Abstract

The invention is concerned with pixel structures and its production. The said pixel structures is on base plant and relates to grid, pattern dielectric layer, pattern metal layer, flatness layer and transparent pixel pole. Grid and pattern dielectric layer covering the grid both set on base plant. The pattern semiconductor layer on the pattern dielectric layer relates to channel layer on top of grid and some protruding blocks. The pattern metal layer relates to source, drain and reflecting pixel pole connecting with drain. Source and drain each cover part of channel layer and the reflecting pixel pole covers the protruding block. The grid, pattern dielectric layer, pattern semiconductor layer and pattern metal layer make of transistor, while the flatness layer on transistor uncovers part of touching window of the reflecting pixel pole. The transparent pixel pole on flatness layer connects with reflecting pixel pole through touching window. The produced pixel structures can use the gap of the single LC cell to make half penetrating and half reflecting LCD.

Description

technical field [0001] The present invention relates to a pixel structure and a manufacturing method thereof, in particular to a pixel structure with reflective electrodes and a manufacturing method thereof. Background technique [0002] With the popularity of liquid crystal displays, many portable electronic products have gradually increased the display function requirements of liquid crystal displays, especially portable electronic products such as mobile phones (mobilephone), personal digital assistant (Personal Digital Assistant, PDA) or palm-sized Computer (PocketPC), etc. These portable electronic products not only need to have a good picture display effect indoors, but also need to maintain an appropriate picture quality outdoors or in a strong light environment. [0003] Therefore, how to maintain a good display quality of the liquid crystal display in a strong light environment has become one of the important trends in the technical development of the liquid crysta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768H01L21/28G02F1/1362G02F1/1343
Inventor 林祥麟林敬桓黄德群
Owner AU OPTRONICS CORP
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