Manufacturing method of semiconductor device grids

Abstract

The invention provides a method for manufacturing a gate of a semiconductor device, comprising: forming a dielectric layer on a semiconductor substrate; forming a polysilicon layer on the dielectric layer; forming a stacked layer structure on the polysilicon layer; forming a photoresist layer on the layer structure; patterning the photoresist layer to define the position of the gate; etching the stacked layer structure and the polysilicon layer to form the gate. The method of the invention can manufacture a gate with a good profile without forming a hard mask, and is especially suitable for the manufacture of a gate with a line width feature size below 65nm.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a gate of a semiconductor transistor. Background technique [0002] Polysilicon is the preferred material for manufacturing gates, which has special heat resistance and high etching and patterning accuracy. The manufacturing method of the gate first needs to form a layer of gate silicon oxide on the semiconductor substrate, then deposit a polysilicon layer on the gate oxide layer, and then coat a fluid bottom anti-reflection layer (BARC) and photoresist. After patterning the photoresist layer, etching the polysilicon layer to form a gate. Figure 1 to Figure 4 It is a schematic cross-sectional view illustrating a conventional gate manufacturing method. Such as figure 1 As shown, a gate oxide layer 110 is grown on a substrate 100, a polysilicon layer 120 is deposited on the gate oxide layer 110, and then the polysilicon layer is et...

AI Technical Summary

Problems solved by technology

Although it solves a series of process problems such as size shift and physical morphology collapse caused by excessive loss of photoresist in the long-term reduction process, this two-step reduction process for manufacturing gates needs to be formed by The hard mask composed of silicon nitride undoubtedly increases the complexity of the process, and the removal of the hard mask uses phosphoric acid, which is easy to corrode the doped gate

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