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Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference

A voltage reference and voltage generation circuit technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of difficult Lewis circuits and limited temperature curvature calibration

Inactive Publication Date: 2009-08-12
ANALOG DEVICES INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The Lewis circuit is not easy to implement in CMOS process, and TlnT temperature curvature calibration is limited

Method used

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  • Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference
  • Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference
  • Bandgap voltage reference circuit and method for producing a temperature curvature corrected voltage reference

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Embodiment Construction

[0074] see first figure 1 , which shows a bandgap voltage reference circuit in accordance with the present invention, denoted by reference numeral 1, which can be used to provide a temperature stable and TlnT temperature curvature calibrated DC voltage reference output. The voltage reference circuit 1 is implemented on a silicon chip in the form of an integrated circuit using CMOS technology. The supply rail 2 of the voltage reference circuit 1 is loaded with a supply voltage Vdd, and the voltage reference circuit 1 is grounded at (number) 3 . A temperature stabilized and TlnT temperature curvature calibrated voltage reference is formed between output 5 and ground 3 .

[0075] The voltage reference circuit 1 includes a bandgap unit 7, which includes a first transistor stack 8, which contains two stacked transistors, that is, two first bipolar transistors Q1 and Q2, the bandgap The cell also includes a second transistor stack 9, which contains two stacked transistors, namely...

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Abstract

A bandgap voltage reference circuit (1) comprising a bandgap unit (7) comprising first (Q1, Q2) and second transistors (Q3, Q4) respectively configured to generate a calibration A PTAT voltage (AVbe), which is proportional to the base-emitter voltage difference of the first and second transistor stacks (8, 9), is developed across a main resistor (R1). A first current mirror circuit (10) provides PTAT current (12 to 15) to the emitters of the first and second transistors (Q1, Q4), and an operational amplifier (A1) connects the first The voltage on the emitter of the transistor (Q2) is maintained at the same level as the voltage on the resistor (R1) and receives a PTAT current from the first current mirror circuit (10) from which other PTAT currents are derived. obtained by mirroring. The calibrated PTAT voltage (dVbe) developed across the primary resistor (R1) is scaled across a secondary resistor (R3) and connected to the uncalibrated base of the first transistor (Q1) in the first transistor stack (8) - The emitter CTAT voltage is superimposed to provide a voltage reference between the output (5) and ground (3). A CTAT calibration current (Icr) is summed with the PTAT current (13) and supplied to the emitter of the second transistor (Q3) in the second transistor stack (9), forming a calibration PTAT across the main resistor (R1) The voltage (dVbe) has a TlnT curvature complementary to the TlnT temperature curvature of the uncalibrated base-emitter CTAT voltage of the first transistor (Q1). In this way, the reference voltage formed between the output terminal (5) and the ground terminal (3) is temperature stable and calibrated by TlnT temperature curvature. The CTAT calibration current is generated in a CTAT current generating circuit (12) based on the base-emitter CTAT voltage of the first transistor (Q1) and flows through the second current mirror circuit (15).

Description

technical field [0001] The present invention relates to a bandgap voltage reference circuit for generating a stable TlnT temperature curvature calibration voltage reference, which circuit is suitable for manufacturing with a CMOS process, and also relates to a PTAT voltage generating circuit for generating PTAT voltage, the circuit Also suitable for fabrication in CMOS processes, the generated PTAT voltage has a complementary temperature curvature to the uncalibrated TlnT temperature curvature CTAT voltage developed across the transistor's base-emitter terminals. The invention also relates to methods for generating said voltage reference and PTAT voltage. Background technique [0002] Most electronic circuits require a stable DC (direct current) voltage reference, especially a temperature stable (not changing with temperature) DC voltage reference. The use of bandgap voltage reference circuits to produce a more desirable temperature stable DC voltage reference is well known...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/30
CPCG05F3/30
Inventor 史蒂文·马林卡
Owner ANALOG DEVICES INC
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