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Semiconductor device and method for manufacturing same

A manufacturing method and semiconductor technology, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc. Poor and other problems

Inactive Publication Date: 2009-08-19
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, during this heat treatment, the crystal structure of copper changes, and the adhesion between the barrier layer and the copper layer may deteriorate.
If the adhesion of these layers deteriorates, copper atoms tend to move near the interface between the barrier layer and the copper layer, reducing electromigration resistance

Method used

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  • Semiconductor device and method for manufacturing same
  • Semiconductor device and method for manufacturing same
  • Semiconductor device and method for manufacturing same

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Experimental program
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no. 2 Embodiment approach

[0041]The semiconductor device according to the second embodiment of the present invention has an insulating film, a barrier layer, a copper seed layer, and a copper plating layer sequentially on a substrate, and the copper seed layer includes a small crystal grain layer and a large crystal grain layer having different crystal grain sizes. The multilayer, small grain layer is in contact with the barrier layer.

[0042] The description regarding the first embodiment is also applicable to the second embodiment as long as the purpose is not violated. This embodiment has a copper layer that does not easily cause electromigration upon heat treatment. As shown in this embodiment, the present invention can also be used in other cases than forming wiring layers.

Embodiment 1

[0044] Refer to the following Figure 1~5 , the embodiment of the present invention will be described. Figure 1~5 is a cross-sectional view showing the manufacturing process of the semiconductor device of this embodiment. The shapes, film thicknesses, temperatures, materials or methods shown in the drawings and the following descriptions are only examples, and the scope of the present invention is not limited by the drawings and the following descriptions.

[0045] 1. Insulation film formation process

[0046] Such as figure 1 As shown, an interlayer insulating film 5 is formed on a semiconductor substrate 1 made of silicon or the like on which an element isolation region 3 and semiconductor elements (not shown in the figure) are formed, and an embedded lower layer wiring 7 is formed on a part of the upper layer of the interlayer insulating film 5. . Further deposit a SiN film 9 with a thickness of 50nm on the interlayer insulating film 5 by CVD, and then sequentially dep...

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Abstract

A semiconductor device having copper wiring with high electromigration resistance is provided. The semiconductor device of the present invention is a semiconductor device having a wiring layer formed by forming grooves or holes in an insulating film formed on a substrate, forming a barrier layer on the obtained substrate, and forming a copper seed layer on the barrier layer, Using the copper seed layer, a copper plating layer is formed by electroplating, and then the copper plating layer and the copper seed layer on the surface are removed. The copper seed layer contains a small crystal layer and a large crystal layer with different crystal grain sizes Multiple layers of grain layers, with small grain layers in contact with barrier layers.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] LSI, which integrates elements such as field effect transistors on a silicon substrate, is achieving high speed and low power consumption through miniaturization. The miniaturization of LSI is developed on the basis of miniaturization rules, so the wiring must also be high-density, multi-layered, and thin-layered. As a result, the stress applied to the wiring and the current density flowing through the wiring increase, and breakage of the wiring due to electromigration has posed a problem. [0003] In the past, aluminum (Al) was used as the wiring material of LSI. In order to improve its electromigration resistance, impurities such as copper and silicon were added to aluminum, or aluminum wiring was sandwiched between high melting point metals such as titanium nitride (TiN) and titanium (Ti). Layers are stacked up and down. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3205H01L21/285H01L23/52
CPCH01L21/76873H01L21/76807H01L21/76843H01L21/76879H01L2221/1089H01L21/28H01L21/285H01L21/3205H01L23/52
Inventor 木下多贺雄
Owner SHARP KK