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Bolometric infrared sensor having two layer structure and method for manufacturing the same

A technology of infrared sensor and bolometer, which is applied in the directions of radiation pyrometry, photometry, optical radiation measurement, etc., and can solve problems such as deformation and reduction of infrared absorption area

Inactive Publication Date: 2009-10-21
OCAS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In detail, an additional process is required to form the silicon oxynitride layer and instead of steam heat generation still causes deformation of the upper part
In addition, the formation of the backing layer also requires an additional process and reduces the infrared absorption area

Method used

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  • Bolometric infrared sensor having two layer structure and method for manufacturing the same
  • Bolometric infrared sensor having two layer structure and method for manufacturing the same
  • Bolometric infrared sensor having two layer structure and method for manufacturing the same

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Embodiment Construction

[0031] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0032] Figure 2 to Figure 11 A perspective view, a cross-sectional view, and a top view of a unit pixel of a bolometric infrared sensor having a two-layer structure according to an embodiment of the present invention are shown.

[0033]According to the present invention, an infrared sensor with a two-layer structure and a unit pixel of 50 μm×50 μm includes a bottom layer 100, an upper layer 200, a cavity 300 between the two layers, and anchors 401, 402, 403 for supporting the upper layer 200 , 404a, 404b, 404c, 404d and 405.

[0034] The bottom layer 100 includes ROIC substrates 101 , 111 , 121 , 131 and 151 (hereinafter collectively referred to as “1×1”) and reflective metal layers 102 , 112 , 132 and 152 (hereinafter collectively referred to as “1×2”) thereon. The material of the reflective metal layer 1x2 is selected from the material group...

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Abstract

The invention discloses a bolometric infrared sensor with a two-layer structure and a manufacturing method thereof. The infrared sensor is resonantly absorbed through a spectroscopic mirror design to improve the absorption rate, and prevents sensor deformation caused by stress caused by heat generation. The infrared sensor comprising an ROIC substrate and a plurality of pixels comprises: a bottom layer comprising a reflective metal layer on the ROIC substrate; a cavity above the bottom layer for resonantly absorbing infrared rays; an upper layer having a sandwich shape , the interlayer includes an absorption-transmission layer having a cutout region in the middle and bolometer layers above and below the absorption-transmission layer; and is disposed at the edge of the pixel for supporting the upper layer and using Fixing parts for electrodes.

Description

technical field [0001] The present invention relates to a bolometric infrared sensor having a two-layer structure and a method of manufacturing the same, and in particular to a method for improving infrared radiation through a spectroscopic design to resonantly absorb infrared rays passing through a λ / 4 optical path including a cavity. absorption rate and by 1) making the pixel symmetrical about its diagonal; 2) forming a sandwich structure in the absorption-transmission layer with a cutout region; and 3) forming a buffer layer including a silicon nitride layer to prevent the A bolometric infrared sensor with sensor deformation caused by various stresses and a method of manufacturing the same. Background technique [0002] Generally, there are two types of infrared sensors (hereinafter referred to as "IR sensors"), namely, cooled IR sensors and uncooled IR sensors. Cooled IR sensors detect electrical signals generated by the interaction of photons of infrared light and elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09G01J1/02
CPCH01L27/1467G01J5/0853G01J2005/202G01J5/53
Inventor 李洪基任容槿
Owner OCAS