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Surge absorber

A technology for absorbing components and surges, applied in electrical components, impedance networks, single-ended pairs networks, etc., can solve the degradation of high-speed signal rise characteristics and delay characteristics, reduce the control voltage rise and energy capacity of surge absorbing components, etc. problem, to achieve the effect of improving the protection level, eliminating the influence of parasitic capacitance components, and excellent impedance matching

Active Publication Date: 2009-11-04
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to apply a surge absorbing element to a circuit that handles high-speed signals, if the parasitic capacitance component of the surge absorbing element is not reduced, the deterioration of the rise characteristic and delay characteristic of the high-speed signal cannot be avoided
However, if the parasitic capacitance component of the surge absorbing element is reduced, the control voltage rise and energy capacity of the surge absorbing element will be reduced

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0045] First, according to figure 1 and figure 2 The structure of the surge absorbing element SA1 of the first embodiment will be described. figure 1 It is a schematic perspective view showing the surge absorbing element of the first embodiment. figure 2 It is an exploded perspective view for explaining the structure of the element body included in the surge absorbing element of the first embodiment.

[0046] Such as figure 1 As shown, the surge absorbing element SA1 includes an element body 1 , a first terminal electrode 3 , a second terminal electrode 5 , a third terminal electrode 7 , and an outer conductor 9 . The element body 1 is in the shape of a cuboid, for example, the length is set to be about 1 mm, the width is set to be about 0.5 mm, and the height is set to be about 0.3 mm. The first terminal electrode 3 and the second terminal electrode 5 are respectively formed at end portions in the longitudinal direction of the element body 1 . The third terminal electr...

no. 2 Embodiment approach

[0106] Below, according to Figure 7 and Figure 8 The structure of the surge absorbing element SA2 of the second embodiment will be described. Figure 7 It is a schematic perspective view showing the surge absorbing element of the second embodiment. Figure 8 It is an exploded perspective view for explaining the structure of the element body included in the surge absorbing element of the second embodiment. In the surge absorbing element SA2 of the second embodiment, the first terminal electrode 3, the second terminal electrode 5, the third terminal electrode 7, the first internal conductor 11, the second internal conductor 13, the first internal electrode 21, the 2. The number of internal electrodes 23 and external conductors 9 differs from the surge absorbing element SA1 of the first embodiment.

[0107] Such as Figure 7 As shown, the surge absorbing element SA2 includes an element body 1 . The element body 1 is in the shape of a cuboid, for example, the length is set ...

no. 3 Embodiment approach

[0119] Below, according to Figure 10 The structure of the surge absorbing element of the third embodiment will be described. Figure 10 It is an exploded perspective view for explaining the structure of the element body included in the surge absorbing element of the third embodiment. The surge absorbing element of the third embodiment differs from the surge absorbing element SA1 of the first embodiment in terms of the configuration of the capacitor unit 40 .

[0120] The surge absorbing element of the third embodiment, and figure 1 The illustrated surge absorbing element SA1 also includes an element body 1 , a first terminal electrode 3 , a second terminal electrode 5 , a third terminal electrode 7 , and an outer conductor 9 . Such as Figure 10 As shown, the element body 1 has an inductor part 10 , a surge absorbing part 20 and a capacitor part 40 . The element body 1 has a structure in which a surge absorbing portion 20 , an inductor portion 10 , a capacitor portion 40 ...

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Abstract

PROBLEM TO BE SOLVED: To provide a surge absorbing element which has superior impedance matching even for a high-speed signal.SOLUTION: The surge absorbing element SA1 has first to third terminal electrodes, an inductor part 10, and a surge absorption part 20. The inductor part 10 has first and second internal conductors 11 and 13 coupled to each other with the opposite polarities; and one end of the internal conductor 11 is connected to a first terminal electrode, one end of the second internal conductor 13 is connected to a second terminal electrode, and the other end of the first internal conductor 11 and the other end of the second internal conductor 13 are connected to each other. The surge absorption part 20 has a first internal electrode 21 connected to the connection point of the first internal conductor 11 and second internal conductor 13 and a second internal electrode 23 connected to a third terminal electrode. A composite DC resistance component of a DC resistance component of the first internal conductor 11 and a DC resistance component of the second internal conductor 13 is set to 0 to 7.5 Ω.

Description

technical field [0001] The present invention relates to surge absorbing elements. Background technique [0002] Semiconductor devices such as ICs and LSIs are destroyed or their characteristics deteriorate due to high-voltage static electricity. Therefore, a surge absorbing element such as a varistor (varistor) is used as a countermeasure against static electricity in a semiconductor device. [0003] However, a surge absorbing element typified by a varistor has a parasitic capacitance component and a parasitic inductance component. Therefore, if the surge absorbing element is applied to a circuit that processes high-speed signals, the high-speed signals will be degraded. In order to apply a surge absorbing element to a circuit that handles high-speed signals, if the parasitic capacitance component of the surge absorbing element is not reduced, the deterioration of the rise characteristic and delay characteristic of the high-speed signal cannot be avoided. However, if the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H5/12H03H7/01
CPCH03H7/1725H03H7/09H03H7/38H03H7/1708H03H7/06H03H7/0107H03H2001/0085
Inventor 千田直树寺田祐二石井浩一簗田壮司松冈大
Owner TDK CORPARATION