Electromagnetic field supply apparatus and plasma processing device
A technology of processing device and supply device, applied in the direction of plasma, connecting device, circuit, etc., can solve the problem that the influence of electromagnetic field cannot be ignored
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no. 1 example
[0057] figure 1 is a structural diagram of the first embodiment of the present invention. In this figure, the same reference numerals are used to denote the same Figure 20 The same or equivalent parts, and the description of the parts will be omitted appropriately.
[0058] figure 1 The shown plasma processing apparatus includes a processing container 1 and an electromagnetic field supply device 10, wherein the processing container 1 stores substrates 4 such as semiconductors or LCDs as objects to be processed, and performs plasma processing on the substrates 4, The electromagnetic field supply device 10 supplies microwaves MW into the container 1, and generates plasma P in the processing container 1 by the action of the electromagnetic field.
[0059] The electromagnetic field supply device 10 includes a high-frequency power supply 11 that generates microwaves MW at a frequency of 2.45 GHz, a radial line slot antenna (hereinafter abbreviated as RLSA) 12 , and a cylindric...
no. 2 example
[0090] Figure 10 is a sectional view of the main part structure of the second embodiment of the present invention. In this figure, the same reference numerals are used to denote the same figure 1 and Figure 7A ~ Figure 7C The same or equivalent parts, and the description of the parts will be omitted appropriately.
[0091] Figure 10 The shown electromagnetic field supply device has a slope portion 81 widening from the cylindrical waveguide 13 toward the conductor plate 22A at the connection portion between the cylindrical waveguide 13 and the radial waveguide 21 . In addition, a bump 30 is provided at the center of the conductor plate 23 and is formed of a lower layer 31 made of metal and an upper layer 32 made of a dielectric.
[0092] Like the electromagnetic field supply device, by providing the protrusion 30 and at the same time providing the slope portion 81 at the connecting portion of the cylindrical waveguide 13 and the radial waveguide 21, the impedance change...
no. 3 example
[0098] Figure 11 is a structural diagram of the third embodiment of the present invention. In this figure, the same reference numerals are used to denote the same Figure 21 The same or equivalent parts, and the description of the parts will be omitted appropriately.
[0099] Figure 11 The plasma processing apparatus shown has a processing container 101 and an electromagnetic field supply device 110, wherein the processing container 101 is used to store substrates (objects to be processed) 104 such as semiconductors or LCDs, and perform plasma processing on the substrates 104. For processing, the electromagnetic field supply device 110 supplies microwaves MW into the container 101 , and generates plasma P in the processing container 101 by the action of the electromagnetic field.
[0100] The electromagnetic field supply device 110 has a high-frequency power supply 111 that generates microwaves MW at a frequency of 2.45 GHz, a radial line slot antenna (hereinafter abbrevi...
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