Making method for CMOS thin film transistor

A technology of oxide semiconductors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as manufacturing process defects, lengthy and complicated manufacturing processes, etc.

Active Publication Date: 2010-01-20
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, due to the long and complicated manufacturing process, it is not only expensive, but also prone to manufacturing process defects, so how to reduce the number of photomasks has become an important issue in the development of thin film transistor array substrates

Method used

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  • Making method for CMOS thin film transistor
  • Making method for CMOS thin film transistor
  • Making method for CMOS thin film transistor

Examples

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Embodiment Construction

[0079] Figure 2A to Figure 2H The manufacturing method of an embodiment of a semiconductor device of the present invention is shown. This embodiment is a schematic diagram of a method for fabricating a thin film transistor array substrate using complementary metal oxide semiconductor thin film transistors. In the thin film transistor array substrate produced in this embodiment, the production of complementary metal oxide semiconductor thin film transistors and storage capacitors only requires two photomasks, and is designed with lightly doped drain (LDD) type NMOS elements and overlap (Overlap ) Type PMOS device to effectively improve the performance of complementary metal oxide semiconductor thin film transistors.

[0080] First, see Figure 2A , A substrate 300 is provided. The substrate 300 has an N-type metal oxide semiconductor (NMOS) region 510, a P-type metal oxide semiconductor (PMOS) region 520, and a capacitor region 530, wherein the NMOS region 510 includes a first T...

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Abstract

This invention relates to a manufacturing method for semiconductor elements including: carrying out first micro-image etching to form a first photoetching substratum with at least two diferent thicknesses to define a semiconductor layer of PMOS and NMOS elements by the photoetching substratum and then defining source / drain of the PMOS element by the ashed first substratum and forming a second photoetching substratum by second micro-image etching to define the grid of the PMOS and NMOS elements from the second substratum then to define a LDD of the NMOS element from the ashed second substratum.

Description

Technical field [0001] The present invention relates to a method for manufacturing a liquid crystal display, in particular to a method for manufacturing a complementary metal oxide semiconductor thin film transistor (CMOS TFT) suitable for a liquid crystal display. Background technique [0002] With the advent of the digital age and the rise of flat-panel displays, low-temperature polysilicon technology has become synonymous with high-quality displays. Under the demand for light, thin and low power consumption products, low-temperature polysilicon display products with high performance and high resolution are attracting attention. Application areas include portable information products, digital cameras, digital cameras, and notebook computers , Mobile phones and high-resolution large-scale video appliances, etc. [0003] Since low-temperature polysilicon thin film transistors can overcome the problem of mobility and provide complementary circuit technology, they also have absolute...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84
Inventor 廖盈奇陈明炎陈亦伟郑逸圣
Owner AU OPTRONICS CORP
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