Film transistor and manufacturing method of its lightly mixed drain area

Abstract

This invention relates to a method for manufacturing a light doped drain region of a film transistor, which first of all forms a polysilicon layer on the base plate then forms a grating insulation layer on the polysilicon layer, after that forms a buffer and a grating on the grating insulation layer, in which, the grating is set on the buffer and exposes part of the buffer, then carries out a doping manufacture technology and forms a light doped drain region in the polysilicon layer corresponding to the lower part of the buffer exposed by the grating.

Description

Technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a method for manufacturing a thin film transistor and a lightly doped drain region thereof. Background technique [0002] Early polysilicon thin film transistors were manufactured using a solid phase crystallization (SPC) manufacturing process, but the manufacturing process temperature was as high as 1,000 degrees Celsius, so a quartz substrate with a higher melting point must be used. However, since the cost of the quartz substrate is much more expensive than that of the glass substrate, and due to the size of the substrate, the panel is only about 2 to 3 inches, so in the past, only small panels could be developed. In recent years, with the continuous advancement of laser technology, an Excimer Laser Annealing (ELA) manufacturing process has been developed, which uses a laser beam to irradiate the amorphous silicon film to melt the amorphou...

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Problems solved by technology

However, the above method of manufacturing the lightly doped drain region is likely to cause difficulties in the pattern alignment of the mask, and even through the self-aligned doping method, the complexity of the manufacturing process steps cannot be avoided.

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