Making method for CMOS thin film transistor

A technology of oxide semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of manufacturing process defects, long and complicated manufacturing process, etc.

Active Publication Date: 2008-03-26
AU OPTRONICS CORP
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, due to the long and complicated manufacturing process, it is not only expensive, but also prone to manufacturing process d

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Making method for CMOS thin film transistor
  • Making method for CMOS thin film transistor
  • Making method for CMOS thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0079] 2A to 2H illustrate a manufacturing method of an embodiment of a semiconductor device of the present invention. This embodiment is a schematic diagram of a manufacturing method of a thin film transistor array substrate using complementary metal oxide semiconductor thin film transistors. In the thin film transistor array substrate manufactured in this embodiment, only two photomasks are needed to manufacture the complementary metal oxide semiconductor thin film transistor and the storage capacitor, and lightly doped drain (LDD) type NMOS elements and overlap (Overlap) are designed. ) type PMOS device to effectively enhance the efficiency of CMOS thin film transistors.

[0080] First, please refer to FIG. 2A, a substrate 300 is provided, the substrate 300 has an N-type metal oxide semiconductor (NMOS) region 510, a P-type metal oxide semiconductor (PMOS) region 520 and a capacitor region 530, wherein the NMOS The region 510 includes a first doped region 511 , a lightly d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention relates to a manufacturing method for semiconductor elements including: carrying out first micro-image etching to form a first photoetching substratum with at least two diferent thicknesses to define a semiconductor layer of PMOS and NMOS elements by the photoetching substratum and then defining source/drain of the PMOS element by the ashed first substratum and forming a second photoetching substratum by second micro-image etching to define the grid of the PMOS and NMOS elements from the second substratum then to define a LDD of the NMOS element from the ashed second substratum.

Description

technical field [0001] The invention relates to a method for manufacturing a liquid crystal display, in particular to a method for manufacturing a complementary metal oxide semiconductor thin film transistor (CMOS TFT) suitable for a liquid crystal display. Background technique [0002] With the advent of the digital age and the rise of flat-panel displays, low-temperature polysilicon technology has become synonymous with high-quality displays. Under the demand for products such as lightness, thinness, and low power consumption, low-temperature polysilicon display products with high performance and high resolution have attracted much attention. The application fields include portable information products, digital cameras, digital video cameras, and notebook computers. , mobile phones and high-resolution large-scale video appliances, etc. [0003] Since the low-temperature polysilicon thin film transistor can overcome the problem of mobility and provide complementary circuit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/84
Inventor 廖盈奇陈明炎陈亦伟郑逸圣
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap