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Luminous element with high light enucleation efficiency

A technology for light-emitting elements and extraction efficiency, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., and can solve problems such as the inability to effectively overcome the light absorption effect of semiconductor stacks, and the complexity and cost of light-emitting diodes.

Active Publication Date: 2010-01-27
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the existing technologies require cumbersome post-processing, which increases the complexity and cost of the light-emitting diodes. In addition, the upper side of the light-emitting layer in the above-mentioned prior art still needs a certain thickness of semiconductor lamination as a window layer or a contact layer. However, part of the light emitted from the light-emitting layer to the semiconductor stack will be absorbed by the semiconductor stack. Therefore, although the above-mentioned prior art can solve the problem of surface total reflection effect, it still cannot effectively overcome the impact of the semiconductor stack on light. absorption

Method used

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  • Luminous element with high light enucleation efficiency
  • Luminous element with high light enucleation efficiency
  • Luminous element with high light enucleation efficiency

Examples

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Effect test

Embodiment 1

[0033] see figure 1 According to a preferred embodiment of the present invention, a light-emitting element 1 with high light extraction efficiency includes a sapphire substrate 10; a nitride buffer layer 11 formed on the sapphire substrate; an N-type nitride buffer layer formed on the nitride buffer layer 11 Nitride semiconductor stack 12, wherein the N-type nitride semiconductor stack 12 includes a first surface and a second surface away from the nitride buffer layer; a nitride multiple quantum well formed on the first surface emits light Layer 13; a P-type nitride semiconductor stack 14 formed on the nitride multiple quantum well light-emitting layer, and the surface of the P-type nitride semiconductor stack 14 away from the nitride multiple quantum well light-emitting layer includes a plurality of downward extending Inner hexagonal cone-shaped hole structure 141; a transparent conductive layer 15 formed on the P-type nitride semiconductor stack 14, wherein, the surface of t...

Embodiment 2

[0036] According to another embodiment of the present invention, it has a similar structure to Embodiment 1, and the difference is that the inner hexagonal cone hole structure is in the P-type semiconductor stack, and the inner hexagonal cone hole starting layer is a The epitaxial temperature ranges from 700°C to 950°C to change the epitaxial nucleation form, and form an inner hexagonal cone hole structure in the P-type semiconductor stack or surface layer. The size and density of the inner hexagonal cone-shaped holes can be controlled by controlling the change of the epitaxial temperature and the rate of temperature rise and fall, thereby changing the light extraction efficiency.

Embodiment 3

[0038] According to another embodiment of the present invention, it has a similar structure to Embodiment 1, and the difference is that the inner hexagonal cone hole structure is in the P-type semiconductor stack, and the inner hexagonal cone hole starting layer is a Nitrogen-rich atmosphere for epitaxial growth, so that it changes the epitaxial nucleation form, and is formed in the P-type semiconductor stack or surface layer. By adjusting the ratio of nitrogen gas, hydrogen gas and nitrogen reaction source in the epitaxial atmosphere, the size and density of the inner hexagonal cone-shaped holes can be adjusted, thereby changing the light extraction efficiency.

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Abstract

The luminous element includes following parts: a base plate; a semiconductor lamination of first nitride formed on the base plate; luminous layer of nitride formed on the semiconductor lamination of first nitride; a semiconductor lamination of second nitride formed on the luminous layer of nitride. There is a structure of cone-shaped cavity in form of hexagonal socket on surface of luminous layer of nitride opposite to semiconductor lamination of second nitride. Through the said structure, the enucleation efficiency of luminous element is raised.

Description

technical field [0001] The invention relates to a light-emitting element, in particular to a light-emitting element with high light extraction efficiency. Background technique [0002] Light emitting diodes are widely used, for example, in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. [0003] In a conventional light-emitting diode, it usually includes a substrate; a first electrical semiconductor stack formed on the substrate; a light-emitting layer formed on the first electrical semiconductor stack; formed on the light-emitting layer A second electrical type semiconductor stack; a transparent conductive layer formed on the second electrical type semiconductor stack. However, since the light emitted by the light-emitting diode is emitted in all directions, it is not a single beam focused on a certain place. From the relationship of Snell's law, it can be known that the light can only be completel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/20
Inventor 欧震林鼎洋张家荣赖世国
Owner EPISTAR CORP
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