Silicon oxide film forming method and semiconductor device manufacturing method

Abstract

A plasma processing apparatus 100 of the RLSA type includes a planar antenna with a plurality of slots formed therein, by which microwaves are supplied into a process chamber to generate plasma. In this apparatus, poly-silicon oxidation is performed at a pressure of 67 to 667 Pa inside the chamber, a temperature of 300 to 600 C, and a microwave power of 1,000 to 3,500W, while a process gas containing Ar gas at a rate of 100 to 2,000 mL / min and O 2 gas at a rate of 1 to 500 mL / min is used with O 2 gas / Ar gas ratio set to be 0.5 to 5%.

Description

technical field [0001] The present invention relates to a method of forming an oxide film and a method of manufacturing a semiconductor device when manufacturing a semiconductor device such as a flash memory element or a thin film transistor. Background technique [0002] Various semiconductor devices, such as silicon semiconductor flash memory elements or thin-film transistors used in LCDs (liquid crystal displays), generally use methods such as thermal oxidation or CVD to form oxide films for the purpose of insulating gate electrodes. And formed. In the past, since the thermal oxidation film obtained by thermal oxidation of silicon or polycrystalline silicon (polycrystalline silicon) was superior in film quality compared with other methods, dry-O 2 Or a wet (Wet) thermal oxidation method such as WVG (Water Vapor Generation) or ISSG (In Situ Steam Generation). [0003] However, since the thermal oxidation method heats polysilicon to a high temperature of 900-1000° C. in a...

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Problems solved by technology

However, in the methods of the above-mentioned Patent Documents 1 and 2, the film quality of the oxide film is mainly improved, so the conditions for increasing the oxidation rate have not been studied.

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