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Phase storage element andmanuafcturing method thereof

A storage element and manufacturing method technology, applied in the direction of electrical components, can solve the problems of reaction, metal polymer diffusion, expansion, etc., achieve the best thermal limit capability, easy component simulation and theoretical calculation, fast component simulation and theoretical calculation Effect

Inactive Publication Date: 2007-07-18
IND TECH RES INST
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Problems solved by technology

[0013] Similarly, in the known phase-change memory elements, the heating electrode is mostly produced by etching, so when the area of ​​the heating electrode exposed to the photoresist is too large, metal polymers will also be produced at the edge of the etching. At this time, when the heat generated by the current is transferred to the etched edge, it may cause the metal polymer to diffuse, expand or react, thereby destroying the component structure

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Embodiment Construction

[0075] Please refer to FIG. 5A and FIG. 5B , which illustrate a phase-change memory element according to an embodiment of the present invention. This phase change memory element is in the shape of a two-dimensional disk, which has a first electrode 210, a first insulating layer 240, a phase change layer 230, a second insulating layer 242, a central through hole 250, a heating electrode 212, and a third insulating layer 244. , the annular through hole 252 and the second electrode 220 . Here, the first electrode 210 , the first insulating layer 240 , the phase change layer 230 and the second insulating layer 242 are sequentially stacked from bottom to top, and the phase change layer 230 and the second insulating layer 242 present a disc shape. The central through hole 250 is roughly located at the center of the disc shape, passing through the first insulating layer 240, the phase change layer 230 and the second insulating layer 242 until the interface of the first electrode 210;...

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Abstract

The invention discloses a phase-changing storage component and its manufacturing method, which is to bury the discoid phase transformation layer into the insulating material, use lithography technique to generate the center penetration hole which runs through and locates at the center of layer, and the ring penetration hole which rounds the center of penetration hole and locates on the verge of layer. At this time, the heating electrode installed in the center penetration hole heats the layer in Joule, and reduces the contacting areas by controlling the thickness of layer. Moreover, a ring second electrode is set in the ring penetration hole, through which, the heat which is sent to the ring interface between transformation layers diffuses, avoiding the heat diffuses to the borders of lay external, and furthermore avoiding etching defects and / or remnants spreading to the materials to lead to abnormal phase change.

Description

technical field [0001] The invention relates to a non-volatile storage component, in particular to a phase-change storage element and a manufacturing method thereof. Background technique [0002] A phase change memory (phase change memory; PCM) is a non-volatile memory component, which uses a thermal effect to change the crystal phase of a phase change material to realize conversion of the resistance value of the component. [0003] At present, phase change materials of chalcogenides have been widely used in the formation of memory cells (cells) of phase change memories. This chalcogenide is a substance with multiple solid-state phases, and it can cause a thermally induced transition phenomenon with temperature changes: where, when it is in a heterogeneous state (with randomly arranged atoms structure), it will exhibit a high resistance value, and in a crystalline state (with a neatly arranged atomic structure), it will exhibit a low resistance value. Here, changing its te...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 陈维恕陈颐承王文翰许宏辉李乾铭卓言赵得胜李敏鸿
Owner IND TECH RES INST
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