Temperature gradient method rotary multiple crucible crystal growth system

Abstract

The invention relates to a rotary multiple crucible tgt crystal growth system. It comprises crystal furnance, crucible, supporting device and temperature controlling device; crystal furnance comprisesfurnance body, heater and furnance tank; the furnance body comprises outer shell, thermal insulating cotton layer, thermal insulating brick layer and fire proof layer from outside to inside; cruciblesupporting device includes lift platform, a plurality of crucible guide pipe mounts and crucible guide pipe on guide pipe mount, down guiding means connected with lift platform, lift generator and power connected with down guiding means; a clamp device is fixed between guide pipe mount and guide pipe; crucible is located inside guide pipe; said crucible supporting device is rotary; said fire proof layer height is 2 / 3- 5 / 6 of the total furnance tank height; said heater is located at height of 1 / 4- 1 / 2 of the furnance tank. The can promote doping concentration and make dop be homogenous.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a temperature gradient method rotating multi-crucible crystal growth system. Background technique [0002] Chinese Patent No. 200420082546.8 describes a double heating temperature gradient method crystal growth device that can effectively grow a single crystal. Similar to the traditional temperature gradient method, the heating body is only as high as the crucible during the crystal growth process. By moving the heating body at an appropriate speed, the heating body is gradually used Crystal growth, this type of method is effective when growing a single crystal, but it cannot grow multiple crystals at the same time. [0003] The crystal growth system in the existing multi-crucible crystal growth technology generally adopts the multi-crucible descending method crystal growth system. In this system, the size of the furnace is extended in one direction, so that the furnace ca...

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Problems solved by technology

[0002] Chinese Patent No. 200420082546.8 describes a double heating temperature gradient method crystal growth device that can effectively grow a single crystal. Similar to the traditional temperature gradient method, the heating body is only as high as the crucible during the crystal growth process. By moving the heating body at an appropriate speed, the heating body is gradually used Crystal growth, this type of method is effective when growing a single crystal, but cannot grow multiple crystals at the same time

This quasi-rectangular asymmetric radial distribution temperature field is suitable for the growth of crystals with a square appearance. The entire crystal growth process is carried out under very quiet conditions. The growth of crystals with similar coagulation coefficients is beneficial to the growth of crystals with a cylindrical appearance, and the melt and crystals in the crucible remain relatively stationary during the entire growth process, lacking forced convection, and the solute transport efficiency is not high, which is not conducive to the growth of components Crystals with large differences in effective segregation coefficients

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