Mask film formation method and mask film formation apparatus

A film forming method and mask technology, applied in microlithography exposure equipment, vehicle design optimization, instruments, etc., can solve problems such as controlling the temperature of substrates and masks

Inactive Publication Date: 2007-08-08
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since temperature control has limitations under heat radiation conditions in a vacuum, and it is required to control the temperature while the substrate and the mask are in contact with each other, for this reason, it is necessary to achieve close adhesion between the substrate and the mask
[0009] In other words, there are issues such as bending of the substrate and mask, high-precision alignment between the substrate and the mask, and ensuring tight adhesion between the substrate and the mask, as well as the corresponding control of the temperature of the substrate and the mask. question

Method used

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  • Mask film formation method and mask film formation apparatus
  • Mask film formation method and mask film formation apparatus
  • Mask film formation method and mask film formation apparatus

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0050] Mask film formation was performed using the apparatus of FIG. 1A.

[0051] For the substrate 10 , an alkali-free glass having an area of ​​400 mm×500 mm and a thickness of 0.6 mm was used. In the substrate 10, a Cr electrode formed into a pattern by a photolithography step and an alignment mark 10b formed as shown in FIG. 3 are disposed. The formed Cr electrode pattern had a size of 50 μm×150 μm.

[0052] For the mask 20 , a thin film mask having an area of ​​430 mm×530 mm and a thickness of 50 μm was formed according to the electroforming method and used. For the material of the mask 20, Ni was used. An alignment mark 20 b having the same position and size as the alignment mark 10 b made of a Cr electrode of the substrate 10 is formed in the mask 20 . The alignment mark 20b of the mask 20 is formed simultaneously with the step of forming the mask pattern (opening) 20a shown in FIG. 4 .

[0053] The test was carried out using the apparatus shown in Figs. 1A and 1B i...

example 2

[0061] According to the same procedure as in Example 1, a state was formed in which, on the mask holder 21 held horizontally, the mask 20 and the substrate 10 were held horizontally and closely adhered to each other.

[0062] In addition, the planar member 13 behind the substrate is brought into abutment against the rear side of the substrate, and after the electromagnet behind the planar member 13 is brought into abutment on the planar member 13, the electromagnet applies electromagnetic force to the mask. In this case, until the electromagnetic force of the electromagnet is applied, the pressing force of the substrate pressing member 12 is maintained. In addition, the mask holder 21 is gradually moved vertically so that the mask 20, the substrate 10, the planar member 13 and the electromagnet are combined into an unbent state.

[0063] In this state, the measurement shows that the amount of positional deviation between the substrate 10 and the mask 20 is within a practical t...

example 3

[0065] According to the same procedure as in Example 2, the mask 20, the substrate 10, the planar member 13, and the electromagnet were combined to form a non-bent state. This mechanism provides a coolant path within the planar member 13, and continuously supplies cooling water whose temperature is controlled at 23°C.

[0066] In this state, a deposition source (not shown) provided 300 mm below the mask 20 was heated to deposit a deposition material (Alq3: manufactured by Dojin Chemistry) on the substrate 10 via the mask 20 . In this case, at the opening, the temperature of the deposition source was 315°C.

[0067] 100 consecutive trials were carried out for deposition. After deposition, the substrate 10 was removed from the vacuum; measurements showed that the amount of positional misalignment between the film patterned on the substrate surface (on the Cr electrodes) and the Cr electrodes on the substrate 10 was within practical tolerances across the substrate Within, that ...

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PUM

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Abstract

A substrate and a mask are closely adhered to each other with a high alignment accuracy. While the both ends of the substrate are sandwiched between a substrate supporting member and a planar member, the center portion of the substrate is bent in a convex fashion by means of a substrate pressing member. On a mask pedestal, the mask is also bent in a convex fashion with respect to the substrate by means of a mask pressing member. After alignment in the plane direction between the mask and the substrate is performed, the mask and the substrate are made to approach each other and the convex portion is closely adhered to each other at an initial stage, and then the respective whole surfaces of the mask and the substrate are closely adhered to each other, while the substrate pressing member and the mask pressing member are moved backward. The mask pressing member may be omitted.

Description

technical field [0001] The present invention relates to a mask film forming method and mask film forming equipment, which are used to form a mask on a substrate through an opening in the mask by using a mask closely bonded to the substrate by vacuum deposition, sputtering, CVD, etc. film is required. Background technique [0002] In recent years, organic EL displays have been put into practical use. As a method of forming red, green, and blue pixels of an organic EL display, it is common to color each group of color pixels using mask deposition. Mask deposition is a pattern film forming method in which, using a mask in contact with the film forming side of a substrate, a deposition substance evaporated from a deposition source is deposited at a predetermined position via the mask. [0003] Therefore, in order to perform deposition at desired positions, it is necessary to precisely position (or precisely align) the substrate and the mask, and then closely adhere the mask an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G03F7/20H05B33/00H01L21/027H01L21/00C23C14/02
CPCH01L51/56H01L51/0011C23C14/042H10K71/166H10K71/00
Inventor 畠山英之薮修一
Owner CANON KK
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