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Antireflective compositions for photoresists

A photoresist, reactive compound technology, applied in the field of coating compositions, can solve the problems of ineffective imaging and etching, damage to photoresist patterns, inability to accurately transfer substrates, etc.

Active Publication Date: 2007-08-29
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, these polymers are highly aromatic and have too low a dry etch rate relative to the newer non-aromatic photoresists for 193nm exposure to be effectively used for imaging and etching
If the dry etch rate of the antireflective coating is similar to or less than that of the photoresist coated on top of the antireflective coating, the photoresist pattern may be damaged or may not transfer accurately to the substrate

Method used

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  • Antireflective compositions for photoresists
  • Antireflective compositions for photoresists

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Charge 600 g of tetramethoxymethyl glycoluril, 96 g of styrene glycol, and 1200 g of propylene glycol monomethyl ether acetate (PGMEA) into a 2-liter (1) jacketed flask equipped with a thermometer, mechanical stirrer, and cold water condenser and heated to 85°C. A catalytic level of p-toluenesulfonic acid monohydrate was added and the reaction was maintained at this temperature for 5 hours. The reaction solution was then cooled to room temperature and filtered. The filtrate was slowly poured into distilled water to precipitate out the polymer. The polymer was filtered, rinsed thoroughly with water and dried in a vacuum oven (yielding 250 g of polymer). The resulting polymer had a weight average molecular weight of about 17,345 g / mol and a polydispersity of 2.7. h 1 NMR indicated that the polymer was a condensation product of two starting materials. The broad peak centered at 7.3 ppm is characteristic of the benzene moiety present in the polymer, and the broad peak ...

Embodiment 2

[0058] 260 g tetramethoxymethyl glycoluril, 41.6 g neopentyl glycol and 520 g PGMEA were charged into a 21 jacketed flask with thermometer, mechanical stirrer and cold water condenser and heated to 85°C. A catalytic level of p-toluenesulfonic acid monohydrate was added and the reaction was maintained at this temperature for 5 hours. The reaction solution was then cooled to room temperature and filtered. The filtrate was slowly poured into distilled water while stirring to precipitate out the polymer. The polymer was filtered, rinsed thoroughly with water and dried in a vacuum oven (yielding 250 g of polymer). The resulting polymer had a weight average molecular weight of about 18,300 g / mol and a polydispersity of 2.8. The broad peak centered at 0.9 ppm is attributed to the methyl group of neopentyl glycol, and the broad peak centered at 3.3 ppm is the unreacted methoxy group on tetramethoxymethyl glycoluril (CH 3 O), which indicates that the resulting polymer is a condensat...

Embodiment 3

[0060] 50 g of tetramethoxymethyl glycoluril, 23.9 g of styrene diol and 35 g of 2-methyl-2-nitropropanediol were charged into a 500 ml jacketed flask equipped with a thermometer and a mechanical stirrer. The reaction mixture was heated to 100 °C to obtain a clear solution. A catalytic level of p-toluenesulfonic acid monohydrate was added and the reaction was held for 60 minutes. Then 60 g of PGMEA was added and the reaction was held for a further 2 hours. The reaction solution was then cooled to room temperature and filtered. The filtrate was slowly poured into ether with stirring to precipitate the polymer. The polymer was filtered, rinsed thoroughly with ether and dried in a vacuum oven (yield 33 g of polymer). The resulting polymer had a weight average molecular weight of about 6,305 g / mol and a polydispersity of 2.6.

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Abstract

The present invention relates to a coating solution comprising a polymer obtained by reacting a glycoluril compound with at least one reactive compound containing at least one hydroxy group and / or at least one acid group, and further where the polymer is soluble in an organic solvent. The invention also relates to a process for imaging a photoresist coated over such a coating composition and to a polymer for the coating composition.

Description

field of invention [0001] The present invention relates to novel coating compositions and their use in image processing by means of forming a thin layer of the novel coating composition between a reflective substrate and a photoresist coating. The composition is particularly useful in the fabrication of semiconductor devices by photolithographic techniques. The invention further relates to the polymers used in the coating composition. Background of the invention [0002] In microetching processes, photoresist compositions are used in the manufacture of miniaturized electronic components such as those used in the manufacture of computer chips and integrated circuits. Generally, in these processes a thin coating of a thin film of a photoresist composition is first applied to a substrate such as a silicon wafer used in the manufacture of integrated circuits. The coated substrate is then baked to evaporate any solvent in the photoresist composition and fix the coating on the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/09
CPCG03F7/091
Inventor 吴恒鹏李丁术季向中菱田有高单会庄弘
Owner MERCK PATENT GMBH
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