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Semiconductor device

A semiconductor and organic semiconductor technology, applied in the field of semiconductor devices, can solve problems such as increased load, abnormal leakage current, and output current reduction

Inactive Publication Date: 2007-10-10
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in a semiconductor device having an LDD structure, when a voltage is applied to a thin film transistor, since the load (resistance) increases due to the low-concentration impurity layer, the output current decreases due to a drop in voltage.
On the other hand, in a semiconductor device having a multi-gate structure, the electric field tends to concentrate (the electric field strength becomes stronger) at the end of the drain region, and if the electric field strength increases, abnormal flow will flow in the drain region. leakage current, or cause insulation breakdown

Method used

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  • Semiconductor device
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no. 1 approach

[0048] FIG. 1 is an equivalent circuit diagram schematically showing the structure of a semiconductor element of a multi-gate structure formed in a semiconductor device. Next, the configuration of a semiconductor element having a multi-gate structure will be described with reference to FIG. 1 .

[0049] As shown in FIG. 1 , the semiconductor element 11 has a multi-gate structure, and a structure in which the first semiconductor element 12 and the second semiconductor element 13 are connected in series is formed on an equivalent circuit. More specifically, the first gate electrode 16 and the second gate electrode 17 are formed between the source terminal 14 and the drain terminal 15 .

[0050] The first gate electrode 16 is directly electrically connected to the gate terminal 18 . The second gate electrode 17 is connected to the gate terminal 18 through a capacitor 19 for dividing the electrostatic capacity. That is, when a voltage is applied to the gate terminal 18 , the pow...

no. 2 approach

[0071] FIG. 4 is a schematic plan view showing the structure of a semiconductor device. Fig. 5(a) is a schematic sectional view along the A-A' section of the semiconductor device of Fig. 4 . Fig. 5(b) is a schematic cross-sectional view along the B-B' cross section of the semiconductor device in Fig. 4 . However, the illustration of the protective film is omitted in the semiconductor device of FIG. 4 . In addition, the difference between the semiconductor device of the second embodiment and the first embodiment is that, instead of the semiconductor device containing the inorganic semiconductor material of the above-mentioned first embodiment, a semiconductor device using a semiconductor layer containing an organic semiconductor material (organic TFT ). Next, the structure of the semiconductor device according to the second embodiment will be described with reference to FIGS. 4 and 5 .

[0072] As shown in FIGS. 4 and 5 , the semiconductor device 50 has a multi-gate structur...

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Abstract

The invention provides a semiconductor device which can suppress decrease of output current as well as flow of leakage current. A semiconductor device 21 has a multi-gate structure where a semiconductor layer 23 is formed to have a first channel region 31 and a second channel region 32 separated from each other, a high-concentration impurity region 33 connecting those two channel regions 31 and 32, an independent source region 34 adjacent to the first channel region 31, and an independent drain region 35 adjacent to the second channel region 32. On the semiconductor layer 23, there are formed a gate insulating film 24, and a first gate electrode 16 and a second gate electrode 17 formed on the gate insulating film 24. An interlayer insulating film capacitor 19 is constituted by an interlayer insulating film 25 positioned in a region A where an end 38 of a second aluminum connection layer 27b overlaps in a flat manner with the first gate electrode 16, and is connected in series with the second gate electrode 17.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to a structural technique for improving electrical characteristics of thin film transistors. Background technique [0002] In the aforementioned semiconductor device, for example, a thin film transistor (Thin Film Transistor: TFT) is formed on a glass substrate. Specifically, a semiconductor layer is formed on a glass substrate, and a source region and a drain region are formed in the semiconductor layer. Furthermore, a gate electrode is formed on the semiconductor layer via a gate insulating film. In such a semiconductor device, in order to improve the reliability of electrical characteristics, a known method is, for example, to include an LDD (Lightly Doped Drain) having a low-concentration impurity layer in the source region and the drain region of the semiconductor device described in Patent Document 1. ) structure, or a multi-gate structure formed by connecting a plura...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L27/28
Inventor 入口千春
Owner SEIKO EPSON CORP