Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inductively Coupled Plasma Reactor

A plasma and reactor technology, applied in the direction of plasma, discharge tube, electrical components, etc., can solve the problems of increasing the distance between the radio frequency antenna and the plasma, reducing the power transfer effect, etc. The effect of yield and productivity

Inactive Publication Date: 2016-03-23
ACN CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when high power is applied to the antenna, the capacitive coupling of the RF antenna increases, so that the dielectric window must be thickened, resulting in an increase in the distance between the RF antenna and the plasma, resulting in a problem that the effect of power transfer is reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inductively Coupled Plasma Reactor
  • Inductively Coupled Plasma Reactor
  • Inductively Coupled Plasma Reactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] Hereinafter, the plasma reactor of the present invention will be described in detail by explaining preferred embodiments of the present invention with reference to the accompanying drawings. The embodiments of the present invention can be modified in various ways, and the scope of the present invention is not limited to the following embodiments. This embodiment is provided to describe the present invention more completely for those skilled in the art. Therefore, for clearer description, the shapes of components and the like in the drawings are exaggerated. In order to facilitate understanding of the drawings, the same reference numerals are assigned to the same components as much as possible. In addition, detailed technical descriptions are omitted for known functions and structures that are judged to obscure the gist of the present invention.

[0050] figure 1 is a sectional view of the plasma reactor according to the first embodiment of the present invention.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A complex plasma reactor is provided to focus a magnetic flux more intensively by covering a RF antenna with a magnetic core. A vacuum chamber(100) has a substrate support, on which a substrate is put on the substrate support. A dielectric window(130) is installed on an upper portion of the vacuum chamber, and is provided at a center thereof with an opening. A gas shower head(140) is installed in the opening of the dielectric window. A RF antenna(151) is installed on an upper portion of the dielectric window around the gas shower head. A magnetic core(150) is installed on the dielectric window to cover the RF antenna. The gas shower head and the substrate support are capacitively coupled to plasma in the vacuum chamber, while the RF antenna is inductively coupled to the plasma.

Description

technical field [0001] The invention relates to a radio frequency (radiofrequency) plasma source (plasma source), in particular to an inductively coupled plasma reactor capable of generating high-density plasma more uniformly. Background technique [0002] A plasma is a highly ionized gas containing equal numbers of positive ions and electrons. Plasma discharge is used for gas excitation to generate reactive gases including ions, radicals, atoms, molecules. Reactive gases are widely used in various fields, and are typically used in semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like. [0003] There are various plasma sources for generating plasma, but typical examples thereof include capacitively coupled plasma and inductively coupled plasma using radio frequency. [0004] Capacitively coupled plasma sources have the following advantages: correct capacitive coupling adjustment and high ion adjustment capability, and higher engi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/30H05H1/46
CPCH01J37/32091H01J37/3211H01J37/3244H01J37/3266
Inventor 崔大圭
Owner ACN CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com