Inductively coupled plasma reactor

Abstract

There is provided a plasma reactor comprising: a vacuum chamber (100) having a substrate support (111) on which a treated substrate (112) is positioned; a gas shower head (140) supplying gas into the interior of the vacuum chamber; a dielectric window (130) installed at an upper portion of the vacuum chamber; and a radio frequency antenna (151) installed above the dielectric window. The gas shower head and the substrate support are capacitively coupled to plasma in the interior of the vacuum chamber and the radio frequency antenna is inductively coupled to the plasma in the interior of the vacuum chamber. The capacitive and inductive coupling of the plasma reactor allows generation of plasma in a large area inside the vacuum chamber more uniformly and more accurate control of plasma ion energy, thereby increasing the yield and the productivity. The plasma reactor includes a magnetic core (150) installed above the dielectric window so that an entrance for a magnetic flux faces the interior of the vacuum chamber and covers the radio frequency antenna. Since the radio frequency antenna is covered by the magnetic core, the magnetic flux can be more strongly collected and the loss of the magnetic flux can be minimized.

Description

[0001] This application is a divisional application of the patent application whose filing date is May 22, 2007, application number is 200710105100.0, and the invention title is "Inductively Coupled Plasma Reactor". technical field [0002] The present invention relates to a radio frequency (radio frequency) plasma source (plasma source), in particular to an inductively coupled plasma reactor capable of generating high-density plasma more uniformly. Background technique [0003] A plasma is a highly ionized gas containing equal numbers of positive ions and electrons. Plasma discharge is used for gas excitation to generate reactive gases including ions, radicals, atoms, molecules. Reactive gases are widely used in various fields, and are typically used in semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like. [0004] There are various plasma sources for generating plasma, but typical examples thereof include capacitive coupled pla...

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Problems solved by technology

In addition, when high power is applied to the antenna, the capacitive coupling of the RF antenna increases, so that the dielectric window must be thickened, thereby causing the distance between the RF antenna and the plasma to increase, resulting in a reduced power transfer effect. question

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