Unlock instant, AI-driven research and patent intelligence for your innovation.

Window protector for sputter etching of metal layers

A technology of window protection and protector, which is applied in metal material coating process, coating, semiconductor/solid-state device manufacturing, etc. It can solve the problems of hindering the deposition of conductive film and preventing the inductive coupling from being blocked.

Inactive Publication Date: 2007-12-26
LAM RES CORP
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The metal plate would hinder the deposition of the conductive film onto the portion of the dielectric window covered by the metal plate, but this would not prevent the inductive coupling between the RF coil and the plasma being blocked during the etch process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Window protector for sputter etching of metal layers
  • Window protector for sputter etching of metal layers
  • Window protector for sputter etching of metal layers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Several exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0025] Figure 1A is a simplified schematic cross-sectional view illustrating an inductively coupled plasma processing apparatus according to one embodiment of the present invention. As shown in FIG. 1A , a semiconductor wafer 10 is mounted on a chuck 12 disposed within a chamber 100 defined by the walls of the housing. Coil 14 is supported above dielectric window 16 by, for example, a spacer (not shown), which may be formed from a suitable insulating material. The dielectric window 16 is typically made of a material such as fused silica or alumina (Al 2 o 3 ) and the like are formed of insulating dielectric materials. The main function of the dielectric window 16 is to seal the top opening of the chamber 100 so that a vacuum can be maintained within the chamber during processing. In operation, an inert gas is fed into chamber 100 th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An inductively coupled plasma processing apparatus includes a chamber (100) having a top opening. A window (16) seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector (20) for protecting the inner surface of the window is disposed within the chamber. The window protector (20) is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors (20') is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.

Description

technical field [0001] The present invention relates generally to semiconductor fabrication and, more particularly, to a window protector for sputter etching metal layers. Background technique [0002] In an inductively coupled plasma etch tool (eg, a commercially available 2003 Versys(R) etch system from LamResearch Corporation of Fremont, CA), a conductive film is deposited on the dielectric window in some etch processes. An example of such an etching process is the sputter etching of platinum electrodes within a magnetoresistive random access memory (MRAM) stack. The dielectric window is usually made of an insulating dielectric material such as fused silica or alumina. Depositing a conductive film on the dielectric window reduces the inductive coupling between the RF coil and the plasma, resulting in a lower plasma density that will eventually be unable to sustain the plasma. When the conductive film begins to interfere with the etching process, the etch chamber must be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/00H01L21/3065C23C16/505
CPCC23F4/00H01J37/32477H01J37/321C23F1/00
Inventor 亚瑟·M·霍华德倪图强
Owner LAM RES CORP