Organic light-emitting field effect transistor

Abstract

A method for preparing organic lighting field-effect transistor comprises that (A), gluing, exposing, developing, and plating at least one metal layer on a substrate, removing, to obtain patterned grid electrode, using insulation layer filming method to deposit at least one insulation layer on the substrate, and forming a source electrode, a second insulation layer, and a drain electrode in same method, while the source electrode is a metal with high work content, the drain electrode is a metal with low work content, to obtain a lower electrode structure of source and drain electrodes with the metals in different work contents, then on the lower electrode structure prepared in the step (A), depositing organic field-effect material in some incline, to form a slim at 1-100nm between the organic field-effect material and the drain electrode, and using organic filming method to deposit organic electroluminescent material at reversal directions, to obtain an organic semi-conductor heterojunction parallel arranged.

Description

technical field [0001] The invention relates to the technical field of light-emitting organic field-effect transistors, in particular to a method for building a novel horizontal organic semiconductor heterostructure, and an organic light-emitting field-effect transistor structure capable of emitting light in air and having low operating voltage. Background technique [0002] Since the invention of high-efficiency organic electroluminescent devices and organic field-effect transistors in the 1980s, (1: Tang, C.W.; Vanslyke, S.A. Appl. Phys. Lett. 1987, 51, 913.2: Burroughs, J.H.; Jones, H. Nature 1990, 335, 137.3: Tsumura, A.; Koezuka, H.; Ando, ​​T. Appl. Phys. Lett. 1986, 49, 1210) organic optoelectronic devices due to their use in active matrix displays, organic integrated circuits, electronic trademarks The potential application value of etc. has been widely concerned by people and has made great progress in various aspects such as performance and industrialization. Comp...

AI Technical Summary

Problems solved by technology

However, the organic light-emitting field-effect transistors reported so far are all measured in a glove box or in a vacuum. This is because the organic semiconductor of the organic field-effect transistors reported so far is a field-effect material, and it is difficult to achieve stable light emission in the air.

This largely limits the further development of organic light-emitting field-effect transistors

Images