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TEM sample least effective thickness detection method

A technology of effective thickness and sample, applied in measuring devices, instruments, scientific instruments, etc., can solve the problem of inability to determine the degree of influence of TEM analysis, and achieve the effect of ensuring accuracy

Active Publication Date: 2010-12-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The Chinese patent application with the application number "200311012961.1" provides a sample and its preparation method, but with this sample, only the damage caused by the application of the FIB process to the sample surface can be observed, and the degree of influence of this damage on the TEM analysis cannot be determined , that is, the application of this method cannot determine the minimum thickness of the sample under the condition of forming a certain thickness of the amorphous layer, and the TEM image reflecting the crystal structure of the sample material can be observed

Method used

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no. 1 example

[0066] As a first embodiment of the present invention, the specific steps of the method for detecting the minimum effective thickness of the sample are:

[0067] First, the FIB process is used to etch the sheet-shaped sample to obtain a wedge-shaped substrate.

[0068] Figure 4 To illustrate the schematic diagram of the TEM detection of the wedge-shaped substrate in Embodiment 1 of the present invention, as Figure 4 As shown, the wedge-shaped base 200 is formed by etching the sheet-like sample along the negative Z direction through FIB; the wedge-shaped base is a triangular prism; It is triangular; the triangular cross-section has a base and two sides, and the triangular cross-section can be connected to the substrate side wall 111 through the base; the bases of the triangular cross-section together form the side bottom surface of the wedge-shaped substrate; The endpoint of the triangular cross-section corresponding to the base is an apex; the vertices of the triangular cr...

no. 2 approach

[0094] As the second embodiment of the method of the present invention, the specific steps of the detection method of the minimum effective thickness of the sample are:

[0095] First, the FIB process is used to etch the sheet-shaped sample to obtain a wedge-shaped substrate.

[0096] Then, TEM analysis is performed on the wedge-shaped matrix to obtain a TEM image that simultaneously reflects the crystal phase and amorphous phase structure of the wedge-shaped sample material, and determine the specific position of the boundary between the crystal phase and the amorphous phase structure.

[0097] Figure 8 To illustrate the schematic diagram of the TEM detection of the wedge-shaped substrate in Embodiment 2 of the present invention, as Figure 8 As shown, after performing TEM analysis on the wedge-shaped matrix, a TEM image of the wedge-shaped matrix reflecting the crystal phase and amorphous phase structure of the sample material is obtained at the same time; the TEM image of...

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Abstract

The invention relates to an examination method for the examining the smallest effective thickness of transmission electron microscope sample. The laminated shape sample is etched and wedge-shaped substrate is obtained, the transmission electron microscope image of the wedge-shaped substrate is obtained, and the boundary line position of the crystalling phase and amorphous phase is determined. Thewedge-shaped substrate is etched and wedge-shaped sample is obtained, and the thickness of the wedge-shaped sample at the position corresponding to the boundary line position is determined as the smallest effective thickness.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing material analysis, in particular to a method for detecting the minimum effective thickness of a TEM sample. Background technique [0002] As the feature size of devices decreases, it becomes more and more important to use high-resolution instruments to observe and analyze defects and specific micro-sizes, and then optimize the process. [0003] As an important tool of electron microscopy, transmission electron microscope (TEM) is usually used to study the microstructure of materials, including crystal morphology, micropore size, multiphase structure and lattice defects, etc. up to 0.1nm. Its working principle is: when the high-energy electron beam penetrates the sample, scattering, absorption, interference and diffraction occur, so that a contrast is formed on the imaging plane and an image is displayed. [0004] Focused Ion Beam (FIB) has similar structure and function as TE...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/08
Inventor 张启华高强李明牛崇实
Owner SEMICON MFG INT (SHANGHAI) CORP