32 results about "Tem analysis" patented technology

An improved method and apparatus for S / TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S / TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.

Methods and assemblies for the construction of liquid-phase alloy nanoparticles are presented. Particle formation is directed by molecular self-assembly and assisted by sonication. In some embodiments, eutectic gallium-indium (EGaIn) nanoparticles are formed. In these embodiments, the bulk liquid alloy is ultrasonically dispersed, fast thiolate self-assembly at the EGaIn interface protects the material against oxidation. The assembly shell has been designed to include intermolecular hydrogen bonds, which induce surface strain, assisting in cleavage of the alloy particles to the nanoscale. X-ray diffraction and TEM analyses reveal that the nanoscale particles are in an amorphous or liquid phase, with no observed faceting.

An improved method and apparatus for extracting and handling samples for S / TEM analysis. Preferred embodiments of the present invention make use of a micromanipulator and a hollow microprobe probe using vacuum pressure to adhere the microprobe tip to the sample. By applying a small vacuum pressure to the lamella through the microprobe tip, the lamella can be held more securely and its placement controlled more accurately than by using electrostatic force alone. By using a probe having a beveled tip and which can also be rotated around its long axis, the extracted sample can be placed down flat on a sample holder. This allows sample placement and orientation to be precisely controlled, thus greatly increasing predictability of analysis and throughput

A method of fabricating sample lamella for transmission electron microscopy (TEM) analysis is provided. A waiting-examination sample having an analysis target on the top surface of that is offered, and at least a mark around the analysis target is defined. A covering layer is covered on the top surface of waiting-examination sample. A holder is attached on the covering layer. A backside polishing process is performed to remove a portion of the waiting-examination sample until the mark is visible under the optical microscopy from the bottom surface of waiting-examination sample. An in-situ lift-out step is performed to pick up a thin membrane containing the analysis target and serve as the sample for TEM analysis.

An improved method and apparatus for S / TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S / TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.

The invention relates to a preparation method for a transmission electron microscope (TEM) sample. The method comprises the following steps: providing a sample requiring detection, wherein the sample requiring detection has at least two areas requiring detection, and the two areas comprises a first detection area and a second detection area; forming a mark on the first detection area of the sample requiring detection; carrying out cutting for the first detection area to obtain a first sample sheet, and carrying out cutting for the second detection area to obtain a second sample sheet, wherein the first sample sheet comprises the mark, and the shape of second sample sheet is the same as the shape of the first sample sheet; attaching and bonding the surface of the first sample sheet and the surface of the second sample sheet to form a two-sample sheet, wherein the surface of the first sample sheet and the surface of the second sample sheet have the areas requiring detection; carrying out milling for the two-sample sheet along the two cut relative side surfaces of the two-sample sheet until the mark is exposed, such that the TEM analysis can be performed for any areas of the sample requiring detection.

An improved method for extracting and handling multiple samples for S / TEM analysis is disclosed. Preferred embodiments of the present invention make use of a micromanipulator that attaches multiple samples at one time in a stacked formation and a method of placing each of the samples onto a TEM grid. By using a method that allows for the processing of multiple samples, the throughput of sample prep in increased significantly.

A method of fabricating sample lamella for transmission electron microscopy (TEM) analysis is provided. A waiting-examination sample having an analysis target on the top surface of that is offered, and at least a mark around the analysis target is defined. A covering layer is covered on the top surface of waiting-examination sample. A holder is attached on the covering layer. A backside polishing process is performed to remove a portion of the waiting-examination sample until the mark is visible under the optical microscopy from the bottom surface of waiting-examination sample. An in-situ lift-out step is performed to pick up a thin membrane containing the analysis target and serve as the sample for TEM analysis.

A TEM (transmission electron microscopy) analysis method using FIB (focused ion beam) includes dividing a TEM sample into a plurality of analysis regions; determining an FIB beam current for each of the analysis regions; and performing FIB milling on each of the analysis regions by using the determined FIB beam current. Further, the method includes loading the TEM sample onto a TEM sample grid and transmitting a TEM electron beam on the TEM sample to perform the TEM analysis.

The invention provides a preparation method of a TEM analysis sample. A metal wire in a contact hole structure which is in bridge connection with one side with defects and a contact hole structure on the other side are removed in a process of forming a sample, so that the problem that a bridge connection defect image is shielded by a relatively dark metal wire image when bridge connection defects are observed in the Y direction is avoided.

A TEM (transmission electron microscopy) analysis method using FIB (focused ion beam) includes dividing a TEM sample into a plurality of analysis regions; determining an FIB beam current for each of the analysis regions; and performing FIB milling on each of the analysis regions by using the determined FIB beam current. Further, the method includes loading the TEM sample onto a TEM sample grid and transmitting a TEM electron beam on the TEM sample to perform the TEM analysis.

The invention relates to a method for testing operating parameters in breakage of a copper wire of electric transmission and transformation equipment. The method includes steps of sampling from practical burnout equipment, selection of an intact wire of identical specification and preparation into a high-temperature simulation sample, Gleeble tensile experiment at different temperatures, metallographic analysis on fractures of a practical broken wire and a broken wire pulled by GLEEBLE, SEM analysis on the fractures of the practical broken wire and the broken wire pulled by GLEEBLE, TEM analysis on the fractures of the practical broken wire and the broken wire pulled by GLEEBLE, and the like. High cost of destructive tests of practical power transmission and transformation equipment underseries parameters is avoided, most approximate operating parameters in breakage instantaneity in operation can be obtained, and accordingly effective criterions can be provided for accident analysis.

The invention provides a preparation method of a planar TEM sample. The method comprises the steps of: preparing a sample, enabling the cross section of a fracture surface of the sample to be close to a target area, cutting the sample to expose a Poly layer, carrying out wet method corrosion, removing Poly, preparing a first cutting surface, cutting the sample, preparing a second cutting surface in a substrate, and finally completing the planar TEM sample. The new method based on the prior art is provided by the invention for TEM analysis which is carried out for observing gate oxide defects and silicon substrate dislocation below polycrystalline Poly, the influences of Poly crystal lattices to TEM observation are removed by means of Poly corrosion, and the detects in the gate oxide can be accurately positioned by the corrosion of a corrosive agent to the substrate. By adopting the method, the quality and the success rate of failure analysis in the type are improved.

The invention discloses a dislocation type electric leakage analysis method in a grooved MOS device. The method comprises the steps of obtaining defect positions corresponding to light emitting points through an EMMI analysis method, controlling EMMI analysis conditions to enable the diameters of the light emitting points to be smaller than or equal to 1.5 microns, preparing TEM samples at the defect positions through an FIB method, and carrying out TEM analysis on the TEM samples, wherein the centers of the TEM samples and the centers of the defect positions coincide, and the thickness of the TEM samples is larger than or equal to the diameter of the light emitting points at the defect positions. The method can be used for quickly and accurately locating, analyzing and determining electric leakage failure caused by dislocation.

The invention discloses a multifunctional sample stage, comprising: a sample stage body, wherein the sample stage body is made of a non-magnetic material or a non-conductor material, the sample stagebody is semi-cylindrical, and at least one window is opened on the section of the semi-cylindrical sample stage body. The multifunctional sample stage provided by the invention can be applied to existing FIB and TEM systems, and can also realize effective integration of three-step failure analysis process consisting of atomic bit FIB stripping, nanoprobe electrical test and TEM analysis of samples. That is, in the entire failure analysis process, sample transfer is not required. Therefore, the multifunctional sample stage provided by the invention can improve the success rate and efficiency ofthe entire failure analysis process, and avoid and reduce the damage, loss and pollution of the sample in the failure analysis work.

The invention discloses a preparation method of a TEM sample of a nickel metal silicide. The method includes steps of: 1) providing a chip, wherein the nickel metal silicide is formed in selected zones in a device layer and a semiconductor substrate interface of the chip; 2) forming a metal protective layer so as to completely cover a target zone that requires TEM analysis; 3) cutting the TEM sample used for TEM analysis by means of ion beam; 4) turning the chip to a certain degree, and performing ion bombarding to the semiconductor substrate layer of the chip by means of the ion beam to completely amorphize the semiconductor substrate layer. The method can improve the TEM contract imaging difference between the semiconductor substrate layer and the TEM sample, and can form the TEM samplewhich allows clear imaging of the nickel metal silicide in a TEM mode, thereby reducing TEM observation time and reducing observation cost of the sample.

Methods and assemblies for the construction of liquid-phase alloy nanoparticles are presented. Particle formation is directed by molecular self-assembly and assisted by sonication. In some embodiments, eutectic gallium-indium (EGaIn) nanoparticles are formed. In these embodiments, the bulk liquid alloy is ultrasonically dispersed, fast thiolate self-assembly at the EGaIn interface protects the material against oxidation. The assembly shell has been designed to include intermolecular hydrogen bonds, which induce surface strain, assisting in cleavage of the alloy particles to the nanoscale. X-ray diffraction and TEM analyses reveal that the nanoscale particles are in an amorphous or liquid phase, with no observed faceting.

The invention provides a preparation method of an inspection sample of a semiconductor device, and the preparation method specifically comprises the following steps: providing a sheet-shaped inspection sample, and exposing a first to-be-detected cross section in the vertical direction of a to-be-detected semiconductor device on the observed transverse surface of the sheet-shaped inspection sample;forming protective layers on the two sides of the sheet-shaped test sample corresponding to the to-be-detected semiconductor device so as to longitudinally coat the sheet-shaped test sample; and longitudinally cutting the sheet-shaped test sample coated with the protective layers to obtain a columnar test sample, the observed longitudinal surface of the columnar test sample exposing a second to-be-tested cross section, perpendicular to the first to-be-tested cross section, of the to-be-tested semiconductor device in the vertical direction. According to the preparation method, accurate fixed-point and ultrathin sample preparation in two directions can be carried out on the same chip sample so that TEM analysis can be carried out on the to-be-detected sample in the two directions, and greathelp is provided for analysis of complex structures and complex defects.

An improved method for extracting and handling multiple samples for S / TEM analysis is disclosed. Preferred embodiments of the present invention make use of a micromanipulator that attaches multiple samples at one time in a stacked formation and a method of placing each of the samples onto a TEM grid. By using a method that allows for the processing of multiple samples, the throughput of sample preparation is increased significantly.

The invention discloses a preparation method of a geological slice sample for TEM analysis. The preparation method comprises the following steps: preparing a slice; selecting an analysis area; fixingthe slice; drilling the analysis area; and obtaining an ion-thinned slice sample, and carrying out ion thinning treatment. A conventional geological slice used for TEM analysis is segmented by a glasscutter, reuse of other areas of the geological slice is affected, the hardness difference between mineral rocks is large, the TEM sample preparation success rate is low, a selected sample area is prepared in a drilling mode for the first time, the TEM sample preparation efficiency is greatly improved, and the success rate of preparation of the TEM sample of the geological slice is improved.

The invention provides a preparation method of a TEM analysis sample. A metal wire in a contact hole structure which is in bridge connection with one side with defects and a contact hole structure on the other side are removed in a process of forming a sample, so that the problem that a bridge connection defect image is shielded by a relatively dark metal wire image when bridge connection defects are observed in the Y direction is avoided.

The invention provides a preparation method of a planar TEM sample. The method comprises the steps of: preparing a sample, enabling the cross section of a fracture surface of the sample to be close to a target area, cutting the sample to expose a Poly layer, carrying out wet method corrosion, removing Poly, preparing a first cutting surface, cutting the sample, preparing a second cutting surface in a substrate, and finally completing the planar TEM sample. The new method based on the prior art is provided by the invention for TEM analysis which is carried out for observing gate oxide defects and silicon substrate dislocation below polycrystalline Poly, the influences of Poly crystal lattices to TEM observation are removed by means of Poly corrosion, and the detects in the gate oxide can be accurately positioned by the corrosion of a corrosive agent to the substrate. By adopting the method, the quality and the success rate of failure analysis in the type are improved.

A recording material of Ag1-xSbx (x=10.8˜25.5 at. %) films for WORM optical disk recording media is invented. The thermal analysis shows that the phase change temperature of AgSb film is between 250 and 270□. The optical property analysis shows that all the as deposited films have good optical absorption and high reflectivity. The X-ray Diffraction analysis shows that the as deposited film and the annealed film are kept at ∈′-AgSb crystalline phase. The TEM analysis shows that the grain size of the Ag80.9Sb19.1 film will grow after annealing. The dynamic test shows that the carrier-to-noise ratio (CNR) of the Ag80.9Sb19.1 optical disc is about 45 dB with λ=657 nm, NA=0.65 and a linear velocity of 3.5 m / s. These Ag1-xSbx films have good optical absorption, high reflectivity and good carrier-to-noise ratio. It can be used as the WORM optical disk recording film.

The invention relates to a preparation method for a transmission electron microscope (TEM) sample. The method comprises the following steps: providing a sample requiring detection, wherein the sample requiring detection has at least two areas requiring detection, and the two areas comprises a first detection area and a second detection area; forming a mark on the first detection area of the sample requiring detection; carrying out cutting for the first detection area to obtain a first sample sheet, and carrying out cutting for the second detection area to obtain a second sample sheet, wherein the first sample sheet comprises the mark, and the shape of second sample sheet is the same as the shape of the first sample sheet; attaching and bonding the surface of the first sample sheet and the surface of the second sample sheet to form a two-sample sheet, wherein the surface of the first sample sheet and the surface of the second sample sheet have the areas requiring detection; carrying out milling for the two-sample sheet along the two cut relative side surfaces of the two-sample sheet until the mark is exposed, such that the TEM analysis can be performed for any areas of the sample requiring detection.

The invention relates to a method for testing operating parameters in breakage of a copper wire of electric transmission and transformation equipment. The method includes steps of sampling from practical burnout equipment, selection of an intact wire of identical specification and preparation into a high-temperature simulation sample, Gleeble tensile experiment at different temperatures, metallographic analysis on fractures of a practical broken wire and a broken wire pulled by GLEEBLE, SEM analysis on the fractures of the practical broken wire and the broken wire pulled by GLEEBLE, TEM analysis on the fractures of the practical broken wire and the broken wire pulled by GLEEBLE, and the like. High cost of destructive tests of practical power transmission and transformation equipment underseries parameters is avoided, most approximate operating parameters in breakage instantaneity in operation can be obtained, and accordingly effective criterions can be provided for accident analysis.

The invention discloses a method for testing SEM (scanning electron microscope) and TEM (transmission electron microscope) by collecting fine particulate matters through TGDSC, which comprises the following steps: step 1, installing a gas sampling clamp containing a gas filter membrane on a pipeline of a gas outlet of a TGDSC instrument, and then fixing a monocrystalline silicon wafer and a copper mesh with a carbon membrane on the filter membrane through a double faced adhesive tape; according to the invention, many experiment parameters can be changed in the TGDSC experiment process, so that the temperature range, the sample amount, the heating rate, the gas type, the atmosphere and the gas flow of the sample can be adjusted, and the TGDSC experiment can be carried out by changing the chemical components of the sample to obtain thermal reaction processes under different experiment conditions; meanwhile, the fine particulate matters in the corresponding reaction process can be collected for SEM and TEM analysis, and finally combustion dynamics and a fine particulate matter generation rule are established, so that an effective laboratory solution is provided for controlling the generation of the fine particulate matters.

The invention discloses a method for preparing a TEM sample of a nickel metal silicide, comprising steps: step 1, providing a chip, and the nickel metal silicide is formed in a selected area of ​​the device layer of the chip and the interface of a semiconductor substrate; step 2 1. Form a metal protective layer to completely cover the area of ​​the target position that needs to be analyzed by TEM; step 3, use ion beam to cut the TEM sample for TEM analysis; step 4, tilt the chip at a certain angle, and use ion beam to TEM The semiconductor substrate layer of the sample is subjected to ion bombardment and the semiconductor substrate layer is completely amorphized. The invention can improve the TEM contrast imaging difference between the semiconductor substrate layer and the nickel metal silicide of the TEM sample. The TEM sample that can directly perform clear imaging of the nickel metal silicide in the TEM mode can be obtained, thereby shortening the TEM observation time of the sample and reducing the observation cost.

The invention provides a TEM sample carrying network supporting film, a preparation method thereof, and a TEM sample analysis method. Wherein, the TEM sample carrier grid support film at least includes: a carrying component, a hollowed out area is provided in the carrying component, and a plurality of hollowed out parts are included in the hollowed out area; a carbon film is covered on the hollowed out area; wherein, A sample hole is arranged in the carbon film covered on at least one of the hollow parts. The sample holes provided on the carbon film of the TEM sample grid support film are suitable for avoiding the TEM sample from being affected by the carbon film when performing TEM analysis, and can be firmly adsorbed on the carbon film at the same time, and obtain sufficient carbon film. support.

A substrate is provided comprising on its surface a patterned area defined by a given topography. The substrate is to be processed for obtaining a TEM sample in the form of a slice of the substrate. According to the method of the invention, a conformal layer of contrasting material is deposited on the topography, by depositing a layer of the contrasting material on a local target area of the substrate, spaced apart from the patterned area. The material is deposited by Electron Beam Induced Deposition (EBID). The deposition parameters, the thickness of the layer deposited in the target area, and the distance of said target area to the patterned area, are such that a conformal layer of the contrasting material is formed on the topography of the patterned area. This is followed by the deposition of the protective layer, which does not damage the topography in the patterned area, as it is protected by the conformal layer. The TEM sample is prepared in a manner known in the prior art, for example by FIB. The conformal contrasting layer provides a good contrast with the protective layer, thereby allowing a high quality TEM analysis.