2 results about "Tem analysis" patented technology

The application discloses a FinFET structure slicing analysis method based on FIB and TEM, and relates to the technical field of semiconductor process detection and analysis. In order to solve the problem of the deficiency of traditional detection technology in resolution and accuracy caused by the complexity of the three-dimensional nano structure of the FinFET device, the application realizes high-precision analysis of the FinFET device by optimizing the whole process of sample pretreatment, FIB processing and TEM analysis. The application utilizes the combination of FIB accurate processing and TEM high-resolution imaging to accurately measure the fin structure morphology, multi-layer film thickness and composition distribution. The application reduces sample damage through processes such as PI conductive adhesive treatment and low-energy ion cleaning, and combines a dynamic parameter optimization mechanism to ensure the sample integrity in the processing and detection process. The application introduces three-dimensional reconstruction and structure-performance correlation analysis, which not only can stereoscopically present the structure characteristics of the FinFET, but also can simulate the influence of parameters such as fin pitch and gate coverage length on the device performance.

The application provides a TEM sample preparation method, comprising the following steps: step one: extracting a sample containing a first target position and a second target position from a chip surface; step two: bonding the sample to a first welding column of a copper carrier; step three: cutting the sample to separate the first target position and the second target position, and cutting off the first target position; step four: bonding the first target position cut off in step three to a second welding column of the copper carrier; step five: cutting the sample remaining on the first welding column to cut off the second target position, and bonding the sample cut off to a third welding column of the copper carrier; and step six: etching the first target position and the second target position respectively until a TEM analysis thickness is reached. The application can simultaneously prepare TEM samples of two target positions with a horizontal distance of less than 370 nm, and overcomes the defect that two close-range cross-section samples cannot be simultaneously prepared by a traditional method.