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Thin-film transistor and image display device

A thin-film transistor and thin-film technology, which is applied in the field of flat panel image display devices, can solve the problems of increasing and decreasing power consumption of image display devices, and achieve the effect of eliminating current

Active Publication Date: 2008-01-16
JAPAN DISPLAY INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, the current in the on-state is reduced, and the driving voltage of the peripheral circuit that requires current must be increased, resulting in an increase in the power consumption of the image display device.

Method used

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  • Thin-film transistor and image display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] FIG. 4 is a plan view illustrating main parts of Embodiment 1 of the thin film transistor of the present invention. Referring to the paper surface of FIG. 4 , the left side of the gate electrode GT is taken as the source side, and the right side is taken as the drain side. The formation side of the drain electrode on the island-shaped semiconductor film SEMI-L has a branch closed circuit, and after the branch closed circuit is branched from the above-mentioned gate electrode GT, it follows and covers the side edge of the outline forming the island-shaped semiconductor film SEMI-L. to surround it. That is, at the end edge on the side where the drain electrode is formed on the island-shaped semiconductor thin film SEMI-L, the branch closed circuit DET covers the upper layer along the end edge. A structure in which the branched closed circuit DET is provided on the gate electrode GT is referred to as an end current suppressing structure.

[0093] In a thin film transisto...

Embodiment 2

[0098] FIG. 5 is a plan view illustrating main parts of Embodiment 2 of the thin film transistor of the present invention. As in the first embodiment, the left side of the gate electrode GT is taken as the source side and the right side is taken as the drain side when facing the paper surface of FIG. 5 . On the formation side of the drain electrode and the formation side of the source electrode on the island-shaped semiconductor film SEMI-L, there is a branch branch RMF branched from the above-mentioned gate electrode GT, along the formation side of the island-shaped semiconductor film SEMI-L. The upper and lower side edges of the profile extend to cover the side edges. In Embodiment 2, the end current suppressing structure provided with the branch RMF is also referred to as an end channel length extension structure.

[0099] In FIG. 5, the branch RMF extends along the upper and lower sides intersecting the gate electrode GT of the island-shaped semiconductor film SEMI-L, and...

Embodiment 3

[0102] Next, examples of the image display device and the manufacturing method of the thin film transistor of the present invention will be described after Example 3. FIG. 6(a) to 6(d) are schematic diagrams illustrating the image display region and the peripheral circuit region of the thin film transistor substrate of the image display device according to Example 3 of the present invention. (a) of FIG. 6 is a plan view of the thin film transistor substrate PNL, (b) of FIG. An enlarged view of the thin-film transistor portion that constitutes the peripheral circuit. In Embodiment 3, the thin film transistor to which the terminal current suppression structure described in Embodiments 1 and 2 is applied is used only in the peripheral circuits of the thin film transistor substrate PNL, especially in the driving circuit.

[0103] As the terminal current suppressing structure, when the terminal current is to be eliminated, a thin film transistor in which the gate electrode in (c) ...

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Abstract

In either of a source side and a drain side of an insular semiconductor thin film, a gate electrode is extended without a break along the contour of the insular semiconductor thin film to provide a branch closed circuit, thereby removing a current component path to server as a sub-channel in the edge of the insular semiconductor thin film, in order to eliminate current components due to the concentration of a gate electric field in silicon thin-film edges occurring in edges of an insular semiconductor thin film of top gate type thin-film transistors and a shift of threshold due to fixed charges in the periphery of the silicon thin-file edges.

Description

technical field [0001] The present invention relates to a thin film transistor and an image display device in which the thin film transistor is applied to a pixel circuit or a driving circuit, and in particular to a flat panel image display device such as a liquid crystal display device and an organic EL display device with high-definition and high-speed display performance. Background technique [0002] In active matrix flat panel image display devices such as liquid crystal display devices and organic EL display devices, thin film transistors are used in peripheral circuits including switching elements of pixel circuits and driving circuits. The channel of a thin film transistor is mostly composed of an amorphous silicon film or a polysilicon film. [0003] When distinguishing the structure of the thin film transistor, there are two types: the bottom gate type in which the gate electrode is located in the lower layer (substrate side) of the channel, and the top gate type i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/423H01L27/12G02F1/1362
CPCH01L27/12H01L29/78612H01L29/42384
Inventor 松村三江子波多野睦子宫本光秀
Owner JAPAN DISPLAY INC