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Novel CMOS voltage reference source without BJT structure

A technology of voltage reference source and MOS tube, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., and can solve problems such as difficult to accurately control the absolute value of output voltage and large fluctuations in process parameters.

Inactive Publication Date: 2008-01-23
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It can be seen that compared with the traditional bandgap reference, the biggest defect of the pure MOS structure reference is that the process parameters it depends on fluctuate greatly, so it is difficult to accurately control the absolute value of the output voltage

Method used

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  • Novel CMOS voltage reference source without BJT structure
  • Novel CMOS voltage reference source without BJT structure
  • Novel CMOS voltage reference source without BJT structure

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Embodiment Construction

[0032] The present invention will be further described below through specific embodiments. In this example, a reference voltage of about 1V needs to be generated for threshold comparison and judgment in the adaptive power transistor driver, and the absolute error of the output voltage is required to be ≤50mV.

[0033] First manually estimate the bias tube size based on the bias current:

[0034] In order to reduce the impact of current changes in (1) and reduce power consumption, I b bias at a lower level, take the I b =5uA.

[0035] The current of the bias circuit can be made smaller, such as 5 / 3mA, and then provided to the main circuit through the current mirror image amplification. From the formula (2), the width-to-length ratios of the NMOS transistors MB1 and MB2 can be obtained respectively:

[0036] (W / L) 1 =2 (W / L) 2 =8

[0037] After determining the size of the main bias circuit, the width-to-length ratios of the PMOS transistors MB3, MB4, MB5, and MB6 in the ca...

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Abstract

The utility model pertains to the field of the analog integration reference source circuit, more particularly, a BJT-free CMOS voltage reference source which comprises a start circuit, a biasing circuit and a reference source circuit. Only MOS tube is used for the voltage reference source to realize the reference voltage, while the three-electrode tube is not needed. Therefore, the utility model has the advantages of simple structure, low power consumption and space-saving, so that the utility model can meet the moderate required precision as demanded by the power tube driver circuit and the voltage sensing circuit, etc.

Description

technical field [0001] The invention belongs to the technical field of analog integrated reference source circuits, and in particular relates to a CMOS voltage reference source without a BJT structure. technical background [0002] Traditional bandgap references are widely used in various analog integrated circuits and mixed-signal circuits due to their precise absolute value of output voltage, low temperature coefficient and good power supply rejection ratio [1]. As the CMOS process becomes more and more the mainstream IC manufacturing process, it is also expected that the entire system, including the analog reference source, can be implemented using CMOS technology. Although a parasitic triode can be used to implement a bandgap reference in the CMOS process, there are still problems such as too large area and high power consumption. Therefore, the research of using pure CMOS technology to realize the voltage or current reference has been carried out and achieved some resu...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/24
Inventor 孔明李文宏
Owner FUDAN UNIV