Chemical and mechanical grinding bench chemical liquid supplying device

Abstract

The present invention discloses a liquid chemical feed device for the chemical-mechanical grinder; the present invention comprises a feed arm, a nozzle, at least one cylinder which controls the horizontal movement of the feed arm, at least one step-to-step motor which controls the vertical movement of the feed arm, control software unit one which controls the horizontal movement of the cylinder, control unit two which controls the step-to-step motor and further controls the radial movement of the chemical grinding liquid nozzle. The present invention can change the liquid feed pattern of grinding liquid to make the nozzle move in radial direction in the grinding process and improve the grinding liquid distribution on the element surface in the grinding process. In the way, the planeness of the chemically dominated grinding process with (e.g. tungsten grinding) is improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing technology, in particular to a chemical liquid supply device for a chemical mechanical grinding machine. Background technique [0002] In the current semiconductor production process, the chemical mechanical polishing process is very important because the chemical mechanical polishing process can provide good planarity. In the existing grinding process, it is possible to adjust the process parameters of the grinding head, such as the pressure and rotational speed of each cavity of the grinding head. However, in some chemical polishing (CMP) processes where chemical action is dominant, adjusting mechanical process parameters often has no great effect. [0003] Although the current process can improve the flatness of W-CMP (tungsten grinding) by changing the position of the nozzle during the grinding process, the overall in-plane flatness cannot be changed. As shown in Figure 1, change the pressure...

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Problems solved by technology

[0003] Although the current process can improve the flatness of W-CMP (tungsten grinding) by changing the position of the nozzle during the grinding process, it cannot change the overall in-plane flatness

As shown in Figure 1, change the pressure of a cavity (retain ring) of the grinding head to 7.2PSI (a pressure unit), 8PSI, and 9PSI respectively. Although the pressure has a certain impact on the overall rate, the rate of the three curves is still higher than that of the middle. Low, cannot change the overall in-plane flatness

In the current process, the rotation speed of the grinding head and the grinding disc can also be changed, and the program of the grinding pad finisher can be adjusted to change the in-plane flatness after grinding, but the effect is not obvious

The results show that in the grinding process of W, only adjusting the rotational speed and pressure of the grinding head and the grinding pad, only adjusting the mechanical action, has less impact on the grinding of W than the chemical action

Therefore, in the existing grinding machine, the position of the nozzle is fixed during the grinding process of the component that transmits the abrasive liquid. Such a hardware configuration is difficult to change the distribution of the abrasive liquid on the product surface, and cannot improve the chemical effect.

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