Chemical and mechanical grinding bench chemical liquid supplying device

Abstract

The invention discloses a chemical liquid supply device for a chemical mechanical grinding machine table. In addition to a supply arm and a nozzle, it also has: at least one cylinder to control the lateral movement of the supply arm; at least one stepping motor to control the movement of the supply arm. Longitudinal movement; control software unit 1, controls the lateral movement of the cylinder; control unit 2, controls the stepping motor so as to control the radial movement of the chemical polishing liquid nozzle. The invention can change the liquid supply mode of the grinding liquid supply device, so that the nozzle of the chemical grinding liquid moves radially during the grinding process, and improves the distribution of the grinding liquid on the wafer surface during the grinding process. This improves the planarity of chemically dominant grinding processes (eg tungsten grinding).

Description

technical field [0001] The invention relates to a semiconductor manufacturing technology, in particular to a chemical liquid supply device for a chemical mechanical grinding machine. Background technique [0002] In the current semiconductor production process, the chemical mechanical polishing process is very important because the chemical mechanical polishing process can provide good planarity. In the existing grinding process, it is possible to adjust the process parameters of the grinding head, such as the pressure and rotational speed of each cavity of the grinding head. However, in some chemical polishing (CMP) processes where chemical action is dominant, adjusting mechanical process parameters often has no great effect. [0003] Although the current process can improve the flatness of W-CMP (tungsten grinding) by changing the position of the nozzle during the grinding process, the overall in-plane flatness cannot be changed. like figure 1 It shows that the pressure...

AI Technical Summary

Problems solved by technology

[0003] Although the current process can improve the flatness of W-CMP (tungsten grinding) by changing the position of the nozzle during the grinding process, it cannot change the overall in-plane flatness

like figure 1 It shows that the pressure of a cavity (retain ring) of the grinding head is changed to 7.2PSI (a pressure unit), 8PSI, and 9PSI respectively. Although the pressure has a certain influence on the overall speed, the speed of the three curves is still lower than that in the middle. Change the overall in-plane flatness

In the current process, the rotation speed of the grinding head and the grinding disc can also be changed, and the program of the grinding pad finisher can be adjusted to change the in-plane flatness after grinding, but the effect is not obvious

The results show that in the grinding process of W, only adjusting the rotational speed and pressure of the grinding head and the grinding pad, only adjusting the mechanical action, has less impact on the grinding of W than the chemical action

Therefore, in the existing grinding machine, the position of the nozzle is fixed during the grinding process of the component that transmits the abrasive liquid. Such a hardware configuration is difficult to change the distribution of the abrasive liquid on the product surface, and cannot improve the chemical effect.

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