Heat-conducting gas supply mechanism, supply method and substrate processing device and method

Abstract

The invention relates to a heat transfer air supply mechanism, a supply method and a substrate processing device and a method thereof, which can supply the heat transfer air altering the space between the placing table and the glass substrate to a preset pressure in a short period and maintain the space at the preset pressure correctly. The heat transfer air supply mechanism comprises: a heat transfer air supply source for supplying the heat transfer air to a space between the base and the substrate; a heat transfer air tank for temporarily storing the heat transfer air from the heat transfer air supply source; a first heat transfer air path whose one terminal connects to the heat transfer air supply source and the other end connects with the space; and a second heat transfer air path which is branched from the first heat transfer air path and connected with the heat transfer air tank. The heat transfer air is temporarily stored in the heat transfer air tank from the heat transfer air supply source via the first and the second heat transfer air path. The heat transfer air stored in the heat transfer air tank is supplied to the space.

Description

technical field [0001] The present invention relates to a heat transfer gas supply mechanism and a heat transfer gas supply method, and a substrate processing device and a substrate processing method including such a heat transfer gas supply mechanism and heat transfer gas supply method. (FPD) A heat transfer gas is supplied to the space between the stage and the substrate to be processed by means of temperature adjustment of the substrate to be processed such as a glass substrate, wherein the substrate to be processed is placed on the stage in the processing container In the state where the prescribed processing is carried out, Background technique [0002] In the FPD manufacturing process, a plasma processing device such as a plasma etching device or a plasma CVD film forming device is used to perform predetermined processing such as etching processing or film forming processing on the glass substrate for FPD as the substrate to be processed. . In a plasma processing app...

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Problems solved by technology

However, in this case, since there is a tank which becomes a large space on the downstream side of the PCV, when the heat transfer gas filled space is filled with heat transfer gas, the PCV cannot detect that there is a problem with the mounting state of the glass substrate. Subtle pressure changes caused by abnormal conditions, etc., the pressure responsiveness of PCV is impaired, so there may be deviations from the actual pressure

If the pressure of the space filled with the heat transfer gas including the space between the mounting table and the glass substrate deviates, the processing quality of the glass substrate will deteriorate.

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