Image module, image inductor and method of producing the same
A technology of image sensing and manufacturing methods, applied in radiation control devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as uneven layout of photosensitive elements, and achieve the effect of eliminating optical crosstalk effects
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Embodiment 1
[0174] Please refer to FIG. 7( a ), which is a schematic diagram of the optical crosstalk effect when no microprisms are added in the first embodiment. Please refer to FIG. 7( b ), which is a schematic diagram of configuring a microprism to trim the main light angle in Embodiment 1. Referring to FIG. Figure 7 (a) and Figure 7 (b) show a base layer 70, a photoreceptor 71, an IC stack layer 72, an intermediate layer 73, a microlens 74, a microprism 75, a small angle (such as 0°) main light angle 76, a large angle (such as 20°) main light angle 77, a first side length 78a and a second side length 78b.
[0175] Referring to FIG. 7( b ), the following stacking steps will be used to illustrate the fabrication of the image sensing device of the present invention. First, the base layer 70 is prepared by an integrated circuit manufacturing process, and then the photoreceptor 71 is prepared by an integrated circuit manufacturing process, which is located above the base layer 70, and th...
Embodiment 2
[0178] Please refer to FIG. 8( a ), which is a schematic diagram of the optical crosstalk effect when no microprisms are added in the second embodiment. Please refer to FIG. 8( b ), which is a schematic diagram of configuring the main light angle with microprisms in the second embodiment. Figure 8(a) and Figure 8(b) show a base layer 80, a photoreceptor 81, an IC stack layer 82, an intermediate layer 83, a microprism 84, a microlens 85, a small angle (such as 0°) main light angle 86, a large angle (such as 20°) main light angle 87, a first side length 88a and a second side length 88b.
[0179] Referring to FIG. 8( b ), the following stacking steps will be used to illustrate the fabrication of the image sensing device of the present invention. First, the photoreceptor 81 is prepared by an integrated circuit manufacturing process, and then the IC stack layer 82 is prepared by an integrated circuit manufacturing process, which is located above the photoreceptor 81, and then the ...
Embodiment 3
[0182]Please refer to FIG. 9( a ), which is a schematic diagram of the optical crosstalk effect when no microprisms are added in the third embodiment. Please refer to FIG. 9( b ), which is a schematic diagram of configuring a microprism to trim the main light angle in Embodiment 3. Figure 9 (a) and Figure 9 (b) show a base layer 90, a photoreceptor 91, an IC stack layer 92, a microprism 93, an intermediate layer 94, a microlens 95, a small angle (such as 0°) main light angle 96, a large angle (such as 20°) main light angle 97, a first side length 98a and a second side length 98b. Referring to FIG. 9( b ), the following stacking steps will be used to illustrate the fabrication of the image sensing device of the present invention. First, the photoreceptor 91 is prepared by an integrated circuit manufacturing process, and then the IC stack layer 92 is prepared by an integrated circuit manufacturing process, which is located above the photoreceptor 91, and then the microprism 93 ...
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