Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography

一种防反射膜、组合物的技术，应用在用于光机械设备的光敏材料、光学、光机械设备等方向，能够解决产生问题等问题

Active Publication Date: 2008-04-09
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the etching process of the semiconductor substrate, since the photoresist forming the mask is thinned, problems may arise in substrate processing by etching.

Method used

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  • Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography
  • Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography
  • Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography

Examples

Experimental program
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Effect test

Synthetic example 1

[0123] 12.00 g of 1,2-cyclohexanedicarboxylic acid glycidyl ester, 4.60 g of fumaric acid, and 0.45 g of benzyltriethylammonium chloride were dissolved in 68.22 g of propylene glycol monomethyl ether, at 130 The reaction was carried out at °C for 24 hours to obtain a polymer-containing solution. When the obtained polymer was analyzed by GPC, the weight average molecular weight in terms of standard polystyrene was 5,800. In addition, it is considered that the obtained polymer has a structure of formula (29) as a repeating unit structure.

Synthetic example 2

[0125] In 66.01 g of propylene glycol mono After immersion in methyl ether, it was made to react at 130 degreeC for 24 hours, and the solution containing a polymer was obtained. When the obtained polymer was analyzed by GPC, the weight average molecular weight in terms of standard polystyrene was 4,800. And, it is considered that the obtained polymer has a structure of formula (30) as a repeating unit structure.

Synthetic example 3

[0127] Dissolve 12.00 g of diglycidyl phthalate (manufactured by Nagase Chemtex Co., Ltd., trade name Denakol EX721), 4.56 g of fumaric acid, and 0.45 g of benzyltriethylammonium chloride After being immersed in 66.01 g of propylene glycol monomethyl ether, it was made to react at 130 degreeC for 24 hours, and the solution containing a polymer was obtained. When the obtained polymer was analyzed by GPC, the weight average molecular weight in terms of standard polystyrene was 7,200. And, it is considered that the obtained polymer has a structure of formula (22) as a repeating unit structure.

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Abstract

To provide an anti-reflective coating which is used in a lithography process for manufacturing a semiconductor device, exhibits excellent anti-reflective effect, does not cause the intermixing with a photoresist and exhibits an etching rate greater than that of a photoresist; and a composition for forming the anti-reflective coating. composition for use in forming an anti-reflective coating for lithography, which comprises a polymer having an ethylene-dicarbonyl structure and a solvent; an anti-reflective coating formed from the composition; and a method for forming a resist pattern which comprises using the composition.

Description

technical field [0001] The present invention relates to a composition for forming an antireflection film. Specifically, it relates to an antireflection film used under a photoresist layer in a photolithography process for semiconductor device manufacture, a composition for forming the antireflection film, and a photoresist using the composition. Formation method of resist pattern. Background technique [0002] Currently, in the manufacture of semiconductor devices, microfabrication by photolithography using a photoresist composition is performed. The microfabrication described above is a processing method in which a thin film of a photoresist composition is formed on a silicon wafer, and a thin film of the photoresist composition is formed through a mask pattern on which a pattern of a semiconductor device is drawn. The surface is irradiated with active light rays such as ultraviolet rays for development, and the silicon wafer is etched using the obtained resist pattern as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11H01L21/027C08G59/42
CPCG03F7/091C08G59/4207Y10S438/952G03F7/004G03F7/0045G03F7/0047G03F7/11G03F7/20
Inventor 坂本力丸
Owner NISSAN CHEM CORP
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