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Wafer grinding method

A grinding process and wafer technology, applied to machine tools, metal processing equipment, grinding/polishing equipment, etc., which are suitable for grinding workpiece planes, can solve the problems of narrowing device formation area and reducing the number of semiconductor chips, etc., and achieve Prevents reduction of device formation area, improves productivity, and secures high efficiency

Active Publication Date: 2008-04-16
DISCO CORP
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Problems solved by technology

In this way, only the bottom surface 4a of the concave portion 1A is finish-ground, and this processing does not perform finish-grinding on the outermost peripheral portion of the bottom surface 4a, so that the presence of this non-ground portion "NG" narrows the device formation region, in such a In some cases, the number of semiconductor chips that can be obtained is also reduced.

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Embodiment Construction

[0043] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

[0044] [1] Semiconductor wafer

[0045] Reference numeral 1 in FIG. 1 denotes a disk-shaped semiconductor wafer (hereinafter referred to simply as a wafer) whose back surface is ground and thinned by the wafer grinding method of this embodiment. The wafer 1 is a silicon wafer or the like, and its thickness before processing is, for example, about 600 to 700 μm. The surface of the wafer 1 is divided into a plurality of rectangular semiconductor chips (devices) 3 by grid-like dividing lines 2 , and electronic circuits (not shown) such as ICs and LSIs are formed on the surfaces of the semiconductor chips 3 .

[0046]A plurality of semiconductor chips 3 are formed in a substantially circular device formation region 4 concentric with the wafer 1 . The device formation region 4 occupies most of the wafer 1 , and the wafer peripheral portion around the device formation re...

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Abstract

The present invention provides a wafer grinding method in which a device formation area can be ensured even after finishing grinding when performing backside grinding for forming a concave portion by two-stage grinding in which rough grinding is followed by finish grinding The initial area can be reduced without reducing the number of semiconductor chips to be obtained, and the grinding process can be efficiently performed. Utilize the coarse grinding wheel (45) of rough grinding unit (40A), form concave part (1A) on the area corresponding to device forming area (4) on the wafer (1) back side, form the ring-shaped convex of its periphery simultaneously. Section (5A). Next, using the fine grinding wheel (46) of the fine grinding unit (40B), the inner peripheral side (5B) of the concave portion (1A) is ground first, and then the bottom surface (4a) is continuously ground.

Description

technical field [0001] The present invention relates to a method for thinning wafers such as semiconductor wafers by back grinding, and in particular relates to a technique of grinding only a region corresponding to a region where devices are formed on the surface to form a concave cross section of the wafer. Background technique [0002] Semiconductor chips used in various electronic devices, etc., are generally manufactured as follows: the surface of a disc-shaped semiconductor wafer is divided into grid-shaped rectangular areas along the planned division lines, and IC or LSI chips are formed on the surface of these areas. Wait for the electronic circuit, then grind the back surface to make the whole thin, and then divide it along the dividing line. Thinning by backside grinding is usually carried out as follows: On a vacuum chuck-type chuck table, expose the backside to be ground to absorb and hold the semiconductor wafer, and press the grinding stone while rotating it. ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B19/22H01L21/304
CPCB24B7/228B24B1/00Y10S438/959
Inventor 吉田真司长井修
Owner DISCO CORP