Non-volatile memory devices and methods of programming the same

A storage device, non-volatile technology, which is applied in the field of non-volatile semiconductor storage devices and its programming, and can solve problems such as the reduction of boosting efficiency

Active Publication Date: 2008-04-16
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Undesired or unwanted programming may occur in memory transistors M11 to M161 coup

Method used

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  • Non-volatile memory devices and methods of programming the same
  • Non-volatile memory devices and methods of programming the same
  • Non-volatile memory devices and methods of programming the same

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[0054] Example embodiments will be described with reference to the accompanying drawings, in which example embodiments are shown. However, the present invention may be embodied in different forms and should not be construed as being limited to the example embodiments presented herein. Rather, these example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In this application, the same reference numerals denote the same elements throughout.

[0055] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one unit from another. For example, the first unit may be referred to as the second unit, and similarly, the second unit may be referred to as the first unit without departing from the scope of the present invention. As us...

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Abstract

A non-volatile semiconductor memory device and method of programming the non-volatile semiconductor memory device are disclosed. The non-volatile semiconductor memory device includes a selected word-line and unselected word-lines including at least one unselected word-line to which a first voltage signal is applied. The selected word-line is coupled to a selected memory transistor and receives a program voltage signal in response to a program voltage enable signal. A first voltage signal is applied to the at least one unselected word-line. The first voltage signal has a voltage level of a reduced pass voltage signal before the program voltage enable signal is activated and has a voltage level of a pass voltage signal while the program voltage enable signal is activated.

Description

[0001] priority statement [0002] This application claims priority from Korean Patent Application No. 2006-99116 filed on October 12, 2006 in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a nonvolatile semiconductor memory device and a method for programming it. Background technique [0004] Conventional semiconductor memory devices can be volatile or nonvolatile. In conventional volatile semiconductor memory devices, data is stored as a logic state of charge / discharge of a flip-flop or capacitor, and data can only be stored when power is applied, and is erased when power is turned off. [0005] Conventional nonvolatile semiconductor memory devices such as Electrically Erasable Programmable Read Only Memory (EEPROM) can store data even when power is turned off. Conventional non-volatile semiconductor memory devices can be used in many application fields,...

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Application Information

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IPC IPC(8): G11C16/08G11C16/26G11C16/10G11C16/30
CPCG11C8/08G11C16/12G11C16/0483G11C16/08
Inventor 朴晸壎
Owner SAMSUNG ELECTRONICS CO LTD
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