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Pixel structure capable of avoiding black-white point flickering after laser repairing

A pixel structure and semiconductor technology, applied in optics, nonlinear optics, instruments, etc., can solve the problems of flicker and reduce the image display quality of thin film transistor liquid crystal displays, and achieve the effect of improving repair quality and efficiency

Active Publication Date: 2008-04-23
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

[0014] Therefore, although this repair method of converting bright spots into micro-bright spots eliminates the shortcomings of pixels always showing bright or dark spots, it will flicker when the positive and negative polarities of the source signal alternate, thus reducing the Image Display Quality of Thin Film Transistor Liquid Crystal Displays

Method used

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  • Pixel structure capable of avoiding black-white point flickering after laser repairing
  • Pixel structure capable of avoiding black-white point flickering after laser repairing
  • Pixel structure capable of avoiding black-white point flickering after laser repairing

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Embodiment Construction

[0033] Figure 3AIt is a partial top view of the laser repaired pixel structure in the first embodiment of the present invention. The pixel of the thin film transistor array substrate has a multi-layer structure, and has two metal layers of a gate electrode layer and a source / drain electrode layer. The gate electrode The layer includes a gate line 304, a storage capacitor line 310 and a first floating metal 316. The gate line 304 is arranged along a row, the storage capacitor line 310 transmits a common voltage Vcom, and the source / drain electrode layer Including a source line 314, a source electrode 300 and a drain electrode 306, the source line 314 transmits the source signal to the source electrode 300, the source electrode 300 and the drain electrode 306 are respectively connected to a first semiconductor electrode 302 Partially overlapping, the gate line 304 has a gate electrode (not shown) located below the first semiconductor electrode 302 , and the gate signal is trans...

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Abstract

Each pixel has a semi conductor electrode partially overlapped with a suspended-joint metal located at the grid electrode layer; both source electrode line and the drain electrode have a bulge overlapped with the semiconductor and the suspended-joint metal; once the pixel is lighted, the a laser beam is used to irradiate the bulge of the source electrode line from the lower surface of the baseboard in order to connect the source electrode line to the suspended-joint metal so as to form a diode structure with filter function; after preparation, the bright spot will not appear at white and black check.

Description

technical field [0001] The present invention relates to a pixel structure, in particular to a pixel structure of a thin film transistor array substrate. Background technique [0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) is currently the most widely used flat panel display, which has the advantages of low power consumption, thin shape and light weight, and low voltage drive. [0003] At present, thin-film transistor liquid crystal display has been developing towards the application field of TV, and the panel is gradually moving towards large-size design. Therefore, the complexity and difficulty of the manufacturing process are also increasing with the increasing size. Therefore, it is difficult to balance the design. The constraints of the manufacturing process and the suppression of the impact of manufacturing process errors on the display quality of the panel are important keys that affect production capacity and yield. [0004] The image display area of ​...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/136G02F1/13H01L27/00
Inventor 邹元昕
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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