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Method for making buffering layer on the base material

A technology of buffer layer and base material, applied in metal material coating process, semiconductor/solid-state device manufacturing, coating, etc., can solve the problem of adding complexity

Inactive Publication Date: 2008-04-30
SINO AMERICAN SILICON PROD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there is still room for improvement in the properties (e.g., surface morphology) of the zinc oxide layer formed by understanding the prior art
In addition, several existing techniques add methodological complexity

Method used

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  • Method for making buffering layer on the base material
  • Method for making buffering layer on the base material

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Embodiment Construction

[0013] The present invention aims to provide a method for manufacturing a buffer layer on a substrate. In particular, during the manufacturing process of the buffer layer, the thickness of the buffer layer can be more precisely controlled, the defect density can be reduced, and the deposition temperature can be lowered. See Figure 1A and Figure 1B As shown, the figure is a cross-sectional view for describing a manufacturing method according to a preferred embodiment of the present invention. The manufacturing method according to the preferred embodiment of the present invention will be described in detail below.

[0014] First, if Figure 1A As shown, according to the manufacturing method of the preferred embodiment of the present invention, the prepared substrate 10 is put into a reaction chamber for atomic layer deposition.

[0015] In a specific embodiment, the substrate 10 may be a sapphire substrate with a crystal direction of (0001), a silicon substrate with a crysta...

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Abstract

The invention provides a method of manufacturing a buffer layer on base material. Particularly, the invention includes forming a ZnO layer on a sapphire base material with the grain direction (0001), a silicon base material with the grain direction (111), 6H-SiC, 4H-SiC base material or glass base material with the grain direction (0001). The ZnO layer is the buffer layer.

Description

technical field [0001] The present invention relates to a method of manufacturing a buffer layer (Buffer layer) on a substrate (Substrate), and particularly the present invention relates to a sapphire (Sapphire) substrate such as a crystal orientation of (0001), a crystal orientation of (111) A manufacturing method for forming a zinc oxide (ZnO) layer as a buffer layer on a silicon substrate, a (0001) 6H-SiC, 4H-SiC substrate, or a glass substrate. Background technique [0002] Inserting a buffer layer between the substrate and the active layer (or micro-nano components), for example, interposing a buffer layer between the sapphire substrate and the gallium nitride layer, is a known technique. Therefore, the buffer layer can reduce the lattice mismatch between the active layer and the substrate, the defect density of the active layer and the thermal expansion coefficient difference between the active layer and the substrate. [0003] With the development of various material...

Claims

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Application Information

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IPC IPC(8): H01L21/365C23C16/00C23C16/40C23C16/44
Inventor 陈敏璋徐文庆何雅兰
Owner SINO AMERICAN SILICON PROD