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Metal-insulator-metal capacitor manufactured using etchback

A capacitor and insulator technology, applied in the field of metal-insulator-metal capacitors manufactured by etch back, can solve the problems of reducing yield, restricting use, and high leakage current

Active Publication Date: 2008-04-30
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, typical MIM capacitors have been found to have unacceptably high leakage currents, limiting their use in many device applications or reducing the yield of devices with acceptable operating characteristics

Method used

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  • Metal-insulator-metal capacitor manufactured using etchback
  • Metal-insulator-metal capacitor manufactured using etchback
  • Metal-insulator-metal capacitor manufactured using etchback

Examples

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Embodiment Construction

[0011] In connection with the present invention, it has been recognized that current leakage is largely affected by the thickness of a portion of the bottom electrode of a metal-insulator-metal (MIM) capacitor. In particular, it has been found that increasing the thickness of the silicided refractory metal layer in the bottom electrode results in increased roughness at the interface between the bottom electrode and the insulating layer located thereon. It is also believed that the number of positive charge traps present at rough interfaces is increased compared to smooth interfaces. Both the increased number of positive charge traps at the interface and the variable thickness of the electrodes are believed to increase the likelihood that electrons will leak through the capacitor. It was also recognized that the thickness of the refractory metal layer used to form at least a portion of the bottom electrode can be reduced, thus reducing current leakage. However, there are sourc...

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Abstract

The invention provides a method for manufacturing a metal-insulator-metal (MIM) capacitor, a method for manufacturing an integrated circuit having a metal-insulator-metal (MIM) capacitor, and an integrated circuit having a metal-insulator-metal (MIM) capacitor. The method for manufacturing the metal-insulator-metal (MIM) capacitor, among other steps and without limitation, includes providing a material layer (185) on a substrate (110), and forming a refractory metal layer (210) having a thickness (t1) on the substrate, at least a portion of the refractory metal layer extending over the material layer. The method further includes reducing the thickness (t2) of the portion of the refractory metal layer (210) extending over the material layer, thereby forming a thinned refractory metal layer (310), and reacting the thinned refractory metal layer (310) with at least a portion of the material layer to form an electrode for use in a capacitor.

Description

technical field [0001] The present invention is directed generally to semiconductor device fabrication; and in particular, to fabrication of metal-insulator-metal (MIM) capacitors utilizing etch-back processes. Background technique [0002] Integrated circuit semiconductor devices will typically contain metal-insulator-metal (MIM) capacitors, also interchangeably referred to as metal-oxide-metal (MOM) capacitors. MIM capacitors are advantageous because they have capacitor plates that do not deplete. Therefore, these capacitors have a low voltage coefficient. In addition, MIM capacitors advantageously have a low temperature coefficient and excellent voltage linearity. [0003] MIM capacitors have also gained wide acceptance because they can be easily integrated into existing semiconductor device manufacturing process flows. In many process flows, the components of the MIM capacitor and the active device are fabricated in the same processing step. For example, the silicide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8242H01L21/20H01L27/108H01L29/00H10B12/00
CPCH01L27/0629H01L28/40
Inventor 托尼·坦·潘马丁·B·莫拉特
Owner TEXAS INSTR INC
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