Method for detecting gallium GaAs/ AlGaAs infrared quantum trap material peak response wavelength
A technology of peak response and detection method, which is applied in the detection field of infrared quantum well materials to achieve the effect of saving time, simple processing and reducing labor costs
Inactive Publication Date: 2008-06-18
SHANDONG UNIV
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In order to overcome the defects of the existing technology and solve the difficulties encountered in the measurement process of traditional methods, the present invention uses Raman scattering spectroscopy to study the transition between subbands of quantum well infrar
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Abstract
The invention provides a method to detect the peak response wavelength of the infrared quantum well material of gallium arsenide or gallium aluminum arsenide. The invention makes use of a Raman spectrograph to detect the backscattering of the infrared quantum well material to get the Raman scattering spectrogram of the material; and converts the strongest peak value Raman frequency shifting Delta v1 into wavelength, which is the peak response wavelength of the infrared quantum well material. The method provided by the invention has the advantages of saving time and saving labor; simple processing procedure of specimens, and avoiding the complex and fussy processing procedure; that the invention seldom damages the materials and consumes few materials.
Description
(1) Technical field: The invention relates to detection technology of infrared quantum well material, in particular to a detection method of peak response wavelength of gallium arsenide / aluminum gallium arsenide infrared quantum well material. (two) background technology: Quantum well infrared detector is a new type of infrared detector that appeared in the 1980s and is widely used in the fields of national defense, industry and medical treatment. The peak response wavelength of quantum well infrared detector is an important parameter that should be considered first in device design. The response wavelength of the quantum well infrared detector depends on the gallium arsenide / aluminum gallium arsenide (GaAs / Al 0.3 Ga 0.7 As) quantum well material structural parameters. In the design of structural parameters, by adjusting parameters such as well width, barrier width, and Al component content in AlGaAs, the excited state of quantum well subband transport is designed to be i...
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Inventor 程兴奎连洁王青圃
Owner SHANDONG UNIV
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