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Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device

A technology of epitaxial reactor and reaction gas, applied in the direction of chemical reactive gas, chemical/physical/physicochemical nozzle reactor, chemical method of reacting gas medium with gas medium, etc., can solve the species that hinder chemicals , reduce efficiency and other issues

Active Publication Date: 2008-06-18
LPE
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0009]The above phenomenon may hinder the transport of chemical species at the optimum concentration and temperature during the epitaxial deposition process, thereby reducing the efficiency of the process

Method used

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  • Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device
  • Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device

Examples

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Embodiment Construction

[0024] Fig. 1 shows an example of an embodiment of the device, the whole device being denoted by reference numeral 1 . The shown device 1 is also partially shown in FIG. 3, wherein the device 1 in FIG. 4 ) into the reaction chamber 40.

[0025] The apparatus 1 envisages a supply duct for conveying a reaction gas indicated by reference numeral 2 and a cooling member generally indicated by reference numeral 3 .

[0026] In the embodiment of FIG. 1 , the member 3 comprises a housing delimiting a chamber 30 by a cylindrical portion 32 terminating in a cover 31 on a first side and a circle on a second side. Disk 33.

[0027] The duct 2 runs inside and outside the housing 3 , through the cover 31 , in particular through a hole in the cover 31 , through the disc 33 , in particular through a hole in it. The cover 31 and the disk 33 are sealed on the pipe 2; since these parts are generally made of metal, the sealing is usually done by welding, so there is no problem in ensuring the ...

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Abstract

The present invention relates to a device (1) for introducing reaction gases into a reaction chamber of an epitaxial reactor; the device (1) comprises a gas supply pipe (2) and a cooling member (3) situated at one end of the supply pipe (2) and able to cool the supply pipe (2) and thereby the gas flowing inside it.

Description

technical field [0001] The invention relates to a device for introducing reaction gas into a reaction chamber and an epitaxial reactor using the device. Background technique [0002] As it is known, an epitaxial reactor is a device used to deposit layers of material in an orderly and uniform manner on a seed crystal or substrate. [0003] These devices are used to provide "slices" to the microelectronics industry, which uses them to produce electrical components, especially integrated circuits. [0004] An epitaxial reactor has a reaction chamber that is maintained at a relatively high temperature during epitaxial growth. Reactive gases are introduced into the reaction chamber where they react to produce material that is deposited epitaxially on the seed or substrate. The temperature of the reaction gas and reaction chamber mainly depends on the deposited material. For example, if silicon (chemical symbol Si) is deposited, the temperature will typically vary from 600°C to...

Claims

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Application Information

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IPC IPC(8): C30B25/14B01J12/02B01J19/26
CPCB01J2219/00119B01J19/26B01J4/002B01J12/02C30B25/14C30B25/08
Inventor V·波泽蒂N·斯佩恰莱G·瓦伦特F·普雷蒂
Owner LPE
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