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Semiconductor memory device and programming method thereof

A storage device and semiconductor technology, applied in information storage, static memory, read-only memory, etc., can solve problems such as corrupting program content

Inactive Publication Date: 2012-07-11
PS4 LUXCO SARL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When such an OTP area is set in PRAM or RRAM, if PRAM elements or RRAM elements are used for the OTP area, the contents of the program may be damaged due to reflow

Method used

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  • Semiconductor memory device and programming method thereof
  • Semiconductor memory device and programming method thereof
  • Semiconductor memory device and programming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] Preferred embodiments of the present invention are explained in detail below with reference to the accompanying drawings.

[0059] figure 1 is a block diagram schematically showing the overall configuration of the semiconductor memory device according to the first embodiment of the present invention.

[0060] like figure 1 As shown, the semiconductor memory device according to the first embodiment has a memory cell array 100 . The memory cell array 100 can be accessed by externally supplying an address signal ADD. Input and output data DQ are input / output to / from the accessed cell. The access control circuit 110 accesses the memory cell array 100, and the I / O circuit 120 transfers input and output data DQ.

[0061] The address signal ADD becomes the internal address IADD after passing through the programming circuit 200 , and the internal address IADD is provided to the access control circuit 110 . The programming circuit 200 is a circuit that stores defective addr...

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Abstract

A semiconductor memory device according to the present invention has a storage unit that includes an interlayer insulation film, a lower electrode layer embedded in the interlayer insulation film, and a recording layer and an upper electrode layer provided on the interlayer insulation film. When a predetermined current is passed to the storage unit, the recording layer is heated by substantially exceeding a melting point, and a cavity is formed near the interface between the recording layer and the lower electrode layer. As a result, the recording layer is physically separated from the lower electrode layer, and no current flows through the storage unit. When the recording layer is physically separated from the lower electrode layer, these layers cannot be returned to the contact state again. Therefore, information can be stored irreversibly.

Description

technical field [0001] The present invention relates to a semiconductor memory device and a programming method thereof, and more particularly to a semiconductor memory device using a variable resistance material whose resistance can reversibly change such as a phase change material and a programming method thereof. Background technique [0002] In a personal computer or a server, various storage devices structured hierarchically are used. Low-grade storage devices are required to be inexpensive and have large capacities, while high-grade storage devices are required to be capable of high-speed access. As the lowest level of storage, magnetic storage such as hard drives and magnetic tapes are commonly used. Magnetic storage devices are nonvolatile, and can save a considerably large amount of data at low cost compared with semiconductor storage devices and the like. However, magnetic storage devices have low access speeds and in many cases do not have random access. Therefo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C29/44G11C17/18
Inventor 中井洁
Owner PS4 LUXCO SARL